GA150TS60U Vishay, GA150TS60U Datasheet - Page 6

• Manufacturer Part Number: GA150TS60U
• Description: IGBT FAST 600V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 14nF @ 30V
• Power - Max: 440W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TS60U
1 0 0 0
6
Fig. 13 - Typical Forward Voltage Drop vs.
1 0 0
50
40
30
20
10
Fig. 11 - Typical Switching Losses vs.
1 0
0
1.0
0

R
R
T
V
V
CC
GE
F o rw a rd V o lta g e D ro p - V
G
J
G1
Instantaneous Forward Current
Collector-to-Emitter Current
I
=27 ;R
= 150 C
= 360V
= 15V
C
= Ohm
50
, Collector-to-emitter Current (A)
2.0
°
G2
100
= 0
3.0
150
T = 125 °C
T = 25°C
J
J
4.0
F M
200
(V )
5.0
250
300
Fig. 14 - Typical Stored Charge vs. di
4 0 0
3 5 0
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
1 6 0 0 0
1 2 0 0 0
5 0
8 0 0 0
4 0 0 0
0
0
0
V
T
V
5 0 0
G E
J
C E
V
Fig. 12 - Reverse Bias SOA
CE
V = 3 6 0V
T = 1 25 °C
T = 2 5°C
= 125°C
= 20V
m easured at term inal (Peak V oltage)
1 0 0
I = 3 00 A
I = 1 50 A
R
J
J
I = 75 A
F
F
F
, Collector-to-Emitter Voltage (V)
SAFE O PERATING AREA
2 0 0
1 0 0 0
di /dt - (A /µs)
3 0 0
f
4 0 0
1 5 0 0
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5 0 0
6 0 0
f
/dt
2 0 0 0
7 0 0
A