GA150TS60U Vishay, GA150TS60U Datasheet - Page 5

• Manufacturer Part Number: GA150TS60U
• Description: IGBT FAST 600V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 14nF @ 30V
• Power - Max: 440W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
25000
20000
15000
10000
5000
30
25
20
15
10
0
Fig. 7 - Typical Capacitance vs.
0
1

V
V
T
I
Collector-to-Emitter Voltage
J
C
CC
GE
= 25 C
= 360V
= 15V
= 150A
V
125°C
R
CE
10
R
G
G1

°
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
, Gate Resistance (Ohm)
, Gate Resistance ( )

C res
C ies
C oes
=
=
=
=


0V,
C
C
C
20
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
100
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0

R
R
V
V

V
Fig. 8 - Typical Gate Charge vs.
GE
CC
I
G
G1
CC
C
=27 ;R
= 15V
= 360V
100
= Ohm
= 400V
= 94A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
J
Q , Total Gate Charge (nC)
G
0
G2
200
GA150TS60U
= 0
20
300
40
60
400
80 100 120 140 160
500

I =

I =

I =
C
C
C
°
300
150
600
75
A
A
A
700
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