MIO2400-17E10 IXYS, MIO2400-17E10 Datasheet - Page 5

• Manufacturer Part Number: MIO2400-17E10
• Description: MOD IGBT SGL SWITCH 1700V E10
• Manufacturer: IXYS

Specifications of MIO2400-17E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 2400A
• Current - Collector (ic) (max): 2400A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 230nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Vces, (v): 1700
• Ic25, Tc = 25°c, Igbt, (a): 3300
• Ic80, Tc = 80°c, Igbt, (a): 2400
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.3
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 980
• Rthjc, Max, Igbt, (k/w): 0.007
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 2400
• Rthjc, Max, Diode, (k/w): 0.012
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

© 2011 IXYS All rights reserved
Fig. 13 Typical reverse recovery characteristics
0.0001
Fig. 15 Thermal impedance vs time
0.001
1000
0.01
900
800
700
600
500
400
300
200
100
0.1
0
0.001
0
V
R
T
L
E
σ
vj
CC
G
rec
= 60 nH
= 125 °C
= 0.56 ohm
vs forward current
= 900 V
1000
0.01
Z
th(j-c)
2000
Diode
I
F
[A]
t [s]
0.1
3000
4000
Z
1
th(j-c)
Q
I
IGBT
RM
RR
5000
2500
2000
1500
1000
500
0
10
Fig. 14 Typical reverse recovery characteristics
1000
900
800
700
600
500
400
300
200
100
Ri(K/kW)
Ri(K/kW)
0
τ
τ
i
i
0
(ms)
(ms)
E
Z
i
rec
th
vs gate resistor
- (j
1
c)
4.91
8.17
(t)
189
196
1
2
R
G
=
[ohm]
∑
i
n
=
3
1.35
2.16
1
MIO 2400-17E10
22
31
V
I
T
L
2
F
R
σ
vj
CC
= 2400 A
= 60 nH
= 125 °C
= 900 V
i
4
(1
I
Q
RM
0.444
0.862
RR
e -
2.4
7.4
3
5
t/ -
2000
1800
1600
1400
1200
1000
800
600
400
200
0
τ
i
)
0.331
0.885
0.54
1.4
4
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