MIO2400-17E10 IXYS, MIO2400-17E10 Datasheet - Page 3

• Manufacturer Part Number: MIO2400-17E10
• Description: MOD IGBT SGL SWITCH 1700V E10
• Manufacturer: IXYS

Specifications of MIO2400-17E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 2400A
• Current - Collector (ic) (max): 2400A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 230nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Vces, (v): 1700
• Ic25, Tc = 25°c, Igbt, (a): 3300
• Ic80, Tc = 80°c, Igbt, (a): 2400
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.3
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 980
• Rthjc, Max, Igbt, (k/w): 0.007
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 2400
• Rthjc, Max, Diode, (k/w): 0.012
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

© 2011 IXYS All rights reserved
Fig. 1 Typical output characteristics, chip level
Fig. 3 Typical onstate characteristics, chip level
Fig. 5 Typical gate charge characteristics
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
20
15
10
800
400
800
400
5
0
0
0
0
0
0
2
17V
15V
13V
11V
9V
4
1
1
6
2
8
2
Q
g
V
V
25 °C
10
V
CE
CE
[µC]
CC
3
[V]
[V]
= 900 V
12
3
4
14
I
T
V
C
vj
CC
125 °C
= 2400 A
= 25 °C
V
T
= 1300
16
GE
vj
4
= 25 °C
5
= 15 V
18
20
6
5
Fig. 2 Typical output characteristics, chip level
Fig. 4 Typical transfer characteristics, chip level
Fig. 6 Typical capacitances vs
1000
100
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
10
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
1
800
400
800
400
0
0
0
0
0
collector-emitter voltage
V
1
CE
5
17V
15V
13V
11V
9V
= 25 V
2
1
10
3
C
C
C
ies
oes
res
4
2
15
5
V
CE
V
V
MIO 2400-17E10
125 °C
6
GE
CE
[V]
3
[V]
20
[V]
7
8
25 °C
4
V
f
V
25
OSC
9 10 11 12 13
GE
OSC
T
= 0 V
= 1 MHz
vj
= 50 mV
= 125 °C
30
5
35
6
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