CM600DY-24A Powerex Inc, CM600DY-24A Datasheet - Page 3

IGBT MOD DUAL 1200V 600A A SER

CM600DY-24A

Manufacturer Part Number
CM600DY-24A
Description
IGBT MOD DUAL 1200V 600A A SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM600DY-24A

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
94nF @ 10V
Power - Max
3670W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
600A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
3.67kW
Collector Emitter Voltage V(br)ceo
1.2kV
Prx Availability
RequestQuote
Distributorinventory
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Voltage
1200V
Current
600A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1024

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600DY-24A
Dual IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T
Rev. 11/07
1200
C
900
600
300
10
10
10
10
, T
0
4
3
2
1
f
0
0
measured point is just under the chips.
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
1
2
FREE-WHEEL DIODE
15
13
(TYPICAL)
(TYPICAL)
4
2
6
3
T
T
CE
EC
T
j
j
= 25°C
= 125°C
j
, (VOLTS)
, (VOLTS)
8
4
= 25 °C
12
11
10
9
10
5
R
R
Symbol
R
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
10
G
0
-1
4
3
2
1
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
Q
D
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
= 15V
= 0V
T
T
300
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0
(TYPICAL)
(TYPICAL)
Per FWDi 1/2 Module
Per IGBT 1/2 Module
600
Test Conditions
C
10
, (AMPERES)
1
900
C
C
C
CE
ies
oes
res
, (VOLTS)
1200
10
2
10
10
10
10
8
6
4
2
0
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
I
Min.
0.52
j
C
= 25°C
= 240A
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
COLLECTOR-EMITTER
10
t
d(on)
0.018
HALF-BRIDGE
t
Typ.
r
(TYPICAL)
(TYPICAL)
12
10
2
14
I
C
I
C
= 1200A
C
0.034
0.062
= 600A
, (AMPERES)
Max.
V
V
R
T
Inductive Load
7.8
GE
CC
GE
j
16
G
= 125°C
, (VOLTS)
= 0.52Ω
= 600V
= 15V
t
d(off)
18
t
f
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3

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