CM200DY-24H Powerex Inc, CM200DY-24H Datasheet - Page 4

IGBT MOD DUAL 1200V 200A H SER

CM200DY-24H

Manufacturer Part Number
CM200DY-24H
Description
IGBT MOD DUAL 1200V 200A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM200DY-24H

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
40nF @ 10V
Power - Max
1500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
1.5kW
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
835-1085
CM200DY-24H

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DY-24H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM200DY-24H
Quantity:
55
Part Number:
CM200DY-24H/E
Manufacturer:
Semikron
Quantity:
1 000
272
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24H
Dual IGBTMOD™ H-Series Module
200 Amperes/1200 Volts
10
10
10
10
10
-1
-2
-3
1
0
10
-3
Single Pulse
T
Per Unit Base = R
C
IMPEDANCE CHARACTERISTICS
= 25 C
10
TRANSIENT THERMAL
-2
(IGBT)
TIME, (s)
10
10
th(j-c)
-1
-5
= 0.085 C/W
10
10
-4
0
10
10
-3
1
10
10
10
-1
-2
-3
10
10
10
10
10
-1
-2
-3
1
0
10
-3
Single Pulse
T
Per Unit Base = R
C
IMPEDANCE CHARACTERISTICS
= 25 C
10
TRANSIENT THERMAL
-2
(FWDi)
TIME, (s)
10
10
th(j-c)
-1
-5
= 0.18 C/W
10
10
-4
0
10
10
-3
1
10
10
10
-1
-2
-3

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