CM75RX-24S Powerex Inc, CM75RX-24S Datasheet - Page 5

IGBT MOD 7PAC 1200V 75A NX SER

CM75RX-24S

Manufacturer Part Number
CM75RX-24S
Description
IGBT MOD 7PAC 1200V 75A NX SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
7-PACr
Datasheets

Specifications of CM75RX-24S

Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.15V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.5nF @ 10V
Power - Max
600W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
Module
Module Configuration
Six
Dc Collector Current
75A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
600W
Operating Temperature Range
-40°C To +150°C
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Leaded Process Compatible
Yes
Prx Availability
RequestQuote
Distributorinventory
View
Voltage
1200V
Current
75A
Circuit Configuration
7-Pac
Recommended Gate Driver
M57159L
Recommended Dc To Dc Converter
VLA106-15242
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
835-1119

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM75RX-24S
Manufacturer:
MITSUBISHI
Quantity:
120
Part Number:
CM75RX-24S
Manufacturer:
Powerex Inc
Quantity:
135
Part Number:
CM75RX-24S
Manufacturer:
MIT
Quantity:
20 000
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Internal Gate Resistance
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Module, T
Characteristics
Lead Resistance (Main Terminals-Chip)
Contact Thermal Resistance
(Case to Heatsink)
*1 Case temperature (T
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*9 B
10/10 Rev. 2
(25/50)
= In(
R
R
j
50
25
= 25°C unless otherwise specified
)/(
T
C
25
1
) and heatsink temperature (T
T
50
1
) R
T
25
*1
25
; Resistance at Absolute Temperature T
= 25 [°C] + 273.15 = 298.15 [K], T
j
= 25°C unless otherwise specified
*1
*1
f
) measured point is just under the chips.
R
R
B
Symbol
Symbol
Symbol
R
R
th(j-c)
th(j-c)
∆R/R
(25/50)
P
th(c-f)
R
lead
R
25
g
Q
D
50
j
= 50 [°C] + 273.15 = 323.15 [K]
= 25°C unless otherwise specified
25
[K], R
50
Approximate by Equation
T
; resistance at Absolute Temperature T
C
Thermal Grease Applied
T
= 100°C, R
Per Clamp Diode
C
Test Conditions
Test Conditions
= 25°C (Per Switch)
(Per 1 Module)
Test Conditions
Per Switch
T
T
Per IGBT
C
C
= 25°C
= 25°C
100
= 493Ω
*2
*9
50
[K],
Min.
Min.
4.85
Min.
–7.3
0.015
3375
5.00
Typ.
Typ.
Typ.
0
Max.
Max.
Max.
0.35
0.63
5.15
+7.8
2.4
10
Units
Units
Units
K/W
K/W
mW
K/W
%
Ω
K
5

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