CM200DY-12NF Powerex Inc, CM200DY-12NF Datasheet - Page 4

IGBT MOD DUAL 600V 200A NF SER

CM200DY-12NF

Manufacturer Part Number
CM200DY-12NF
Description
IGBT MOD DUAL 600V 200A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200DY-12NF

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
30nF @ 10V
Power - Max
650W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
650W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Distributorinventory
View
Voltage
600V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2C-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1011

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DY-12NF
Manufacturer:
MITSUBISHI/三菱
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Part Number:
CM200DY-12NF
Quantity:
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4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-12NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
10
10
10
10
10
10
3
2
1
2
1
0
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
R
T
Inductive Load
V
V
I
T
Inductive Load
C Snubber at Bus
C
j
CC
GE
CC
GE
j
G
= 25°C
= 125°C
= 200A
= 3.1
GATE RESISTANCE (TYPICAL)
EMITTER CURRENT, I
= 300V
= ±15V
= 300V
= ±15V
GATE RESISTANCE, R
SWITCHING LOSS VS.
(TYPICAL)
10
10
2
1
E
, (AMPERES)
G
, ( )
E
E
SW(on)
SW(off)
I
t
rr
rr
10
10
3
2
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
-1
-2
-3
0
10
0
-3
I
Single Pulse
T
Per Unit Base =
R
R
C
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 200A
0.19°C/W
(IGBT)
0.35°C/W
(FWDi)
200
= 25°C
10
GATE CHARGE VS. V GE
=
=
TRANSIENT THERMAL
GATE CHARGE, Q
-2
400
(IGBT & FWDi)
V
CC
TIME, (s)
600
10
10
= 200V
-1
-5
G
800
, (nC)
V
CC
10
10
= 300V
-4
1000
0
1200
10
10
-3
1
10
10
10
-1
-2
-3
10
10
10
-1
1
0
10
1
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT, I
SWITCHING LOSS VS.
10
2
V
V
R
T
Inductive Load
C Snubber at Bus
j
CC
GE
G
C
= 125°C
, (AMPERES)
= 3.1
= 300V
= ±15V
E
E
SW(on)
SW(off)
10
3

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