MUBW50-06A8 IXYS, MUBW50-06A8 Datasheet - Page 7

• Manufacturer Part Number: MUBW50-06A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-06A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 2.8nF @ 25V
• Power - Max: 250W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 120
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 75
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.50
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 1.00
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

E
© 2007 IXYS All rights reserved
E
I
Output Inverter T1 - T6 / D1 - D6
CM
on
on
120
100
mJ
80
60
40
20
mJ
A
4
2
0
0
9
6
3
0
0
0
0
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
R
T
V
V
I
T
C
VJ
G
CE
GE
VJ
V
V
R
T
= 39 Ω
VJ
CE
GE
= 125°C
G
= 600 V
= ±15 V
= 35 A
= 125°C
= 39 Ω
= 600 V
= ±15 V
= 125°C
10
20
times versus collector current
times versus gate resistor
RBSOA
200
20
40
400
30
60
R
40
80
I
G
C
600
E on
V
100
50
CE
E on
t r
t d(on)
t r
t d(on)
Ω
A
800
120
60
160
120
80
40
0
ns
180
150
120
90
60
30
0
ns
V
t
t
E
Z
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001 0.001
mJ
10
5
4
3
2
1
0
3
2
1
0
1
0
0
Fig. 14 Typ. turn off energy and switching
Fig.16
Fig. 18 Typ. transient thermal impedance
V
V
I
T
E
C
VJ
CE
GE
t
off
d(off)
= 600 V
= ±15 V
= 35 A
= 125°C
t
10
d(off)
20
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
20
single pulse
MUBW 50-06 A8
0.01
40
30
R
0.1
40
G
I
C
V
V
R
T
t
60
VJ
CE
GE
G
= 600 V
= 39 Ω
= ±15 V
= 125°C
50
1
A
E
t
MUBW5006A8
f
off
Ω
diode
IGBT
s
t
f
80
60
10
20070921a
500
400
300
200
100
0
600
400
200
0
ns
ns
7 - 8
t
t