CM150DX-24A Powerex Inc, CM150DX-24A Datasheet - Page 2

IGBT MOD DUAL 1200V 150A NX SER

CM150DX-24A

Manufacturer Part Number
CM150DX-24A
Description
IGBT MOD DUAL 1200V 150A NX SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM150DX-24A

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
23nF @ 10V
Power - Max
960W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
150A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
10mW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
No. Of Pins
11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1008
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DX-24A
Dual IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, T
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
Peak Collector Current (Pulse)
Emitter Current (T
Peak Emitter Current (Pulse)
Maximum Collector Dissipation (T
*1 Case temperature (T
*2 I
*3 Pulse width and repetition rate should be such that device junction temperature (T
*4 Junction temperature (T
BASEPLATE FLATNESS
MEASUREMENT POINT
E
, I
EM
, V
EC
, t
rr
and Q
C
C
= 25°C)
X
C
HEATSINK SIDE
= 91°C)
) and heatsink temperature (T
rr
j
) should not increase beyond T
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*1*4
*3
Y
– : CONCAVE
+ : CONVEX
*1
*3
C
= 25°C)
j
= 25°C unless otherwise specified
*1*4
f
) are defined on the surface of the baseplate and heatsink at just under the chip.
j(max)
rating.
CHIP LOCATION (TOP VIEW)
36.2
32.6
Chip Location (Top View)
21.2
0
IGBT
j
) does not exceed T
FWDi
47
48
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
1
Symbol
NTC Thermistor
V
V
I
V
2
T
EM
I
I
P
CES
GES
CM
E
ISO
I
T
3
stg
j(max)
C
C
*2
j
4 5
*2
Th
6
rating.
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ±1mm)
CM150DX-24A
-40 to 150
-40 to 125
±0 ~ +100
2500
1200
330
±20
150
300
150
300
960
31
40
24
23
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
µm
°C
°C
Rev. 3/09
43.8
21.2
0

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