MUBW35-12E7 IXYS, MUBW35-12E7 Datasheet - Page 8

• Manufacturer Part Number: MUBW35-12E7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW35-12E7

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 35A
• Current - Collector (ic) (max): 52A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 52A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 30
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 52
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 36
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.2
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

E
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Z
Brake Chopper T7 / D7
I
0.0001
off
C
thJC
0.001
0.01
K/W
0.1
50
40
30
20
10
mJ
10
A
0.001
0
4
3
2
1
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
E
VJ
CE
GE
G
off
= 82 Ω
= 600 V
= ±15 V
= 125°C
5
1
single pulse
0.01
times versus collector current
10
T
VJ
2
15
= 25°C
0.1
20
3
V
T
VJ
CE
I
C
25
= 125°C
t
1
V
4
GE
30
= 15 V
t
t
d(off)
f
diode
IGBT
V
A
s
35
10
5
800
600
400
200
0
ns
t
R
E
10000
off
I
1000
F
100
3.0
2.5
2.0
Ω
mJ
30
25
20
15
10
A
5
0
0
0
0
Fig. 20 Typ. forward characteristics of
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance versus
V
V
I
T
C
VJ
CE
GE
E
off
= 600 V
= ±15 V
= 20 A
= 125°C
20
25
1
Temperature Sensor NTC
T
free wheeling diode
times versus gate resistor
temperature
VJ
40
= 125°C
50
2
60
75
MUBW 35-12 E7
80
T
3
VJ
V
100
= 25°C
F
100
T
R
4
125
G
120
MUBW3512E7
t
V
d(off)
t
f
C
Ω
140
150
5
20070912a
1000
ns
750
500
250
0
8 - 8
t