MUBW35-12E7 IXYS, MUBW35-12E7 Datasheet - Page 2
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MUBW35-12E7
Manufacturer Part Number
MUBW35-12E7
Description
MODULE IGBT CBI E2
Manufacturer
IXYS
Type
Converter/Brake/Inv (CBI) IGBT Modulesr
Datasheet
1.MUBW35-12E7.pdf
(8 pages)
Specifications of MUBW35-12E7
Configuration
Three Phase Inverter with Brake
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 35A
Current - Collector (ic) (max)
52A
Current - Collector Cutoff (max)
400µA
Input Capacitance (cies) @ Vce
2nF @ 25V
Power - Max
225W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
52A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Mounting Style
Screw
Product
Power Semiconductor Modules
Reverse Voltage
1.6 KV
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
30
Rthjc, Typ, Rect 1/3 Ph., (k/w)
1.3
Vces, Inv 3 - Ph., (v)
1200
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
52
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
36
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2.2
Rthjc, Typ, Inv 3 - Ph., (k/w)
0.55
Vces, Br Chopper, (v)
1200
Ic80, Tc = 80°c, Br Chopper, (a)
25
Rthjc, Typ, Br Chopper, (k/w)
0.7
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUBW35-12E7
Manufacturer:
ATMEL
Quantity:
301
Part Number:
MUBW35-12E7
Quantity:
60
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
E
R
© 2007 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CM
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
F
rec(off)
ies
thJC
thJC
Gon
Conditions
T
Continuous
T
T
RBSOA; V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
R
CE
CE
CE
CE
CE
= 35 A; V
= 30 A; di
= 1 mA; V
= 35 A; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
= 600 V; V
Inductive load, T
V
V
= 25°C to 150°C
= 900 V; V
= V
= 600V; V
= 0 V; V
= 25 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
F
GE
GE
GE
/dt = -1100 A/µs; T
= ± 15 V; R
GE
GE
GE
= 0 V; T
= 15 V; T
GE
= ± 20 V
= V
= 0 V; T
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= ± 15 V; R
C
G
CE
= 35 A
= 39 Ω
VJ
T
T
T
VJ
VJ
= 125°C
VJ
VJ
VJ
VJ
G
= 25°C
= 125°C
C
= 25°C
= 25°C
= 125°C
= 39 Ω; T
= 125°C
= 35 A
G
= 39 Ω; T
(T
VJ
VJ
= 125°C
= 25°C, unless otherwise specified)
VJ
= 125°C
VJ
= 125°C
min.
min.
4.5
Characteristic Values
Characteristic Values
Maximum Ratings
Maximum Ratings
440
180
150
typ.
typ.
2.2
2.5
0.4
5.4
2.6
1.8
1.8
85
50
50
51
1200
± 20
V
2
225
CES
52
36
70
10
50
33
max.
max.
0.55 K/W
1.19 K/W
200
2.8
6.5
0.4 mA
2.8
mA
mJ
mJ
mJ
nC
nA
nF
µs
ns
ns
ns
ns
ns
W
A
A
V
V
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D11 - D16
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
T7 / D7
IGBT (typ.)
Free Wheeling Diode (typ.)
C
C
C
C
C
C
th1
th2
th1
th1
th2
th2
C
C
C
C
= 0.156 J/K; R
= 1.162 J/K; R
= 0.043 J/K; R
V
th1
th2
th1
th2
V
V
V
= 0.106 J/K; R
= 0.79 J/K; R
= 0.54 J/K; R
V
0
0
0
0
MUBW 35-12 E7
0
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= 1.37 V; R
= 0.83 V; R
= 0.95 V; R
= 1.39 V; R
= 1.26V; R
GE
GE
= 15 V; T
= 15 V; T
th2
th2
0
th1
th2
th1
th2
th1
th2
th1
0
0
0
th1
0
J
= 15 m Ω
= 11 m Ω
= 45 m Ω
= 56 m Ω
= 0.239 K/W
= 0.462 K/W
= 62 m Ω
= 125°C)
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= 0.545 K/W
= 0.155 K/W
= 2.738 K/W
= 1.06 K/W
J
J
= 125°C)
= 125°C)
J
J
= 125°C)
= 125°C)
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