CM75DU-12F Powerex Inc, CM75DU-12F Datasheet - Page 4

• Manufacturer Part Number: CM75DU-12F
• Description: IGBT MOD DUAL 600V 75A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM75DU-12F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 290W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 75A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA507
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B or BG2C-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75DU-12F
Trench Gate Design Dual IGBTMOD™
75 Amperes/600 Volts
150
120
10
10
10
10
10
10
10
90
60
30
0
3
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
0
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
T
V
V
R
T
Inductive Load
T
CC
GE
j
j
G
j
= 25°C
= 25°C
= 25
FORWARD CHARACTERISTICS
= 8.3 Ω
= 300V
= ±15V
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
V
o
C
1
GE
FREE-WHEEL DIODE
= 20V
15
11
(TYPICAL)
(TYPICAL)
(TYPICAL)
t
I
rr
rr
2.0
10
2
7.5
1
8
E
10 9.5
, (AMPERES)
8.5
9
3.0
EC
3
CE
, (VOLTS)
, (VOLTS)
4.0
10
4
2
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
COLLECTOR-CURRENT, I
= 75A
GE
= 0V
30
= 15V
200
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25°C
= 125°C
V
10
CC
0
60
(TYPICAL)
(TYPICAL)
= 200V
400
V
90
CC
G
C
10
, (nC)
, (AMPERES)
= 300V
GE
1
600
CE
CE
120
C
, (VOLTS)
C
C
oes
ies
res
150
10
800
2
10
10
10
10
10
10
10
10
10
5
4
3
2
1
0
-1
-2
-3
3
2
1
0
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
0
-3
V
V
R
T
Inductive Load
Per Unit Base
R
R
Single Pulse
T
j
T
CC
GE
G
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 125°C
j
GATE-EMITTER VOLTAGE, V
6
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 8.3 Ω
= 25°C
= 25°C
= 300V
= ±15V
10
= 0.43°C/W (IGBT)
= 0.9°C/W (FWDi)
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
-2
I
C
(IGBT & FWDi)
HALF-BRIDGE
= 30A
I
10
C
(TYPICAL)
(TYPICAL)
= 75A
TIME, (s)
I
10
10
C
10
12
= 150A
-1
-5
1
t
t
t
t
d(off)
f
d(on)
r
14
C
, (AMPERES)
GE
10
10
16
, (VOLTS)
-4
0
18
10
10
10
20
-3
2
1
10
10
10
-1
-2
-3