CM75DU-12F Powerex Inc, CM75DU-12F Datasheet - Page 3

• Manufacturer Part Number: CM75DU-12F
• Description: IGBT MOD DUAL 600V 75A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM75DU-12F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 290W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 75A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA507
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B or BG2C-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75DU-12F
Trench Gate Design Dual IGBTMOD™
75 Amperes/600 Volts
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
Symbol
t d(on)
t d(off)
C oes
C ies
C res
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T c Reference
Per IGBT 1/2 Module, T c Reference
T c Reference Point Under Chip
Point per Outline Drawing
Point per Outline Drawing
V CC = 300V, I C = 75A,
V CE = 10V, V GE = 0V
Per IGBT 1/2 Module,
V GE1 = V GE2 = 15V,
Switching Operation
Inductive Load
Test Conditions
Test Conditions
R G = 8.3,
I E = 75A
Min.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
Typ.
–
–
–
–
–
–
–
–
1.4
–
0.29
0.055
100
300
250
150
20
80
Max.
Max.
1.4
0.75
–
0.43
0.9
–
Units
Units
°C/W
°C/W
°C/W
°C/W
μC
ns
ns
ns
ns
ns
nf
nf
nf
3