MUBW20-06A7 IXYS, MUBW20-06A7 Datasheet - Page 5

• Manufacturer Part Number: MUBW20-06A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW20-06A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 20A
• Current - Collector (ic) (max): 35A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 125W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 24
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 35
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.0
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 18
• Rthjc, Typ, Br Chopper, (k/w): 1.39
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1 Forward current versus voltage
Fig. 4
1
Fig. 6 Transient thermal impedance junction to case
© 2001 IXYS All rights reserved
Z
P
Input Rectifier Bridge D11 - D16
I
F
thJC
tot
K/W
600
500
400
300
200
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
W
0.001
A
0
0
0.0
0
drop per diode
Power dissipation versus direct output current and ambient temperature, sin
20
0.4
T
T
40
VJ
VJ
0.8
= 125°C
= 25°C
60
0.01
1.2
V
F
8
80
1.6
V
I
100
d(AV)M
2.0
120
A
I
0.1
FSM
Fig. 2 Surge overload current
160
140
120
100
0
80
60
40
20
A
0.001
0
20
50Hz, 80% V
40
0
0.01
60
RRM
1
80 100 120 140
T
VJ
T
= 125°C
VJ
T
= 45°C
amb
0.1
t
0.05 K/W
0.15 K/W
t
R
0.3 K/W
0.5 K/W
thA
s
1 K/W
2 K/W
5 K/W
s
:
DWFN17-16
°C
1
10
°
Fig. 5 Max. forward current versus
Fig. 3 I
I
d(AV)
I
2
t
A
10
10
80
60
40
20
2
A
s
0
3
2
1
0
case temperature
2
t versus time per diode
20 40 60 80 100 120 140
MUBW 20-06 A7
2
T
VJ
= 45°C
T
VJ
3
= 125°C
4 5 6 7 8 9
T
C
t
ms
5 - 8
°C
10