MUBW20-06A7 IXYS, MUBW20-06A7 Datasheet
MUBW20-06A7
Specifications of MUBW20-06A7
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MUBW20-06A7 Summary of contents
Page 1
... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -15 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 600 V CES C25 ...
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... Conditions 25°C F25 80°C F80 C Symbol Conditions /dt = -400 A/µ 300 (per diode) thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° CEK CES = 125° 125 Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2.2 VJ 4.5 = 25° ...
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... Symbol Conditions 25° 125° 25° RRM T = 125° /dt = -400 A/µ 300 thJC © 2001 IXYS All rights reserved Maximum Ratings 600 125° CEK CES = 125° Characteristic Values ( unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2.1 VJ 4.5 = 25° 125° ...
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... Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2001 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 k 3375 K Maximum Ratings -40...+125 C 150 C -40...+125 C ...
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... Power dissipation versus direct output current and ambient temperature, sin 1 8 1.4 K/W 1.2 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 160 50Hz, 80 RRM 140 120 T = 45° FSM 100 125°C ...
Page 6
... Fig. 8 Typ. output characteristics 125° 0.0 0.5 1.0 1 Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 800 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 11V 125° 25°C VJ 2.0 2 125°C = 300V = 30A MUBW2006A7 A/ s 1000 ...
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... R G Fig.16 Typ. turn off energy and switching times versus gate resistor 10 1 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 400 ns 300 t 200 100 500 ns 375 t 250 125 f 0 100 120 diode IGBT MUBW2006A7 ...
Page 8
... 125° off 0.4 0.2 0 Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 100 100 T Fig. 24 Typ. thermistorresistance versus temperature = 25° 400 ns d(off) 300 t 200 100 f 0 100 120 R G MUBW2006A7 125 °C 150 ...