MID75-12A3 IXYS, MID75-12A3 Datasheet - Page 4

• Manufacturer Part Number: MID75-12A3
• Description: MOD IGBT RBSOA 1200V 900A Y3-DCB
• Manufacturer: IXYS

Specifications of MID75-12A3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 370W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 90
• Ic80, Tc = 80°c, Igbt, (a): 60
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 5.6
• Rthjc, Max, Igbt, (k/w): 0.33
• If25, Tc = 25°c, Diode, (a): 100
• If80, Tc = 80°c, Diode, (a): 60
• Rthjc, Max, Diode, (k/w): 0.66
• Package Style: Y4-M5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
120
100
24
mJ
18
12
80
60
40
20
20
mJ
15
10
A
6
0
5
0
0
0
0 10 20 30 40 50 60 70 80 90 100
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
t
= 125°C
= 50A
= 600V
200
= ±15V
d(on)
E
on
t
20
r
times versus collector current
times versus gate resistor
RBSOA
400
40
600
R
T
V
J
CEK
G
= 125°C
= 22
< V
60
800 1000 1200
W
CES
R
I
G
C
80
t
E
d(on)
t
V
V
R
T
V
on
r
CE
GE
J
G
CE
= 125°C
= 22
= 600V
= ±15V
100
W
V
A
W
120
90
60
30
0
240
180
120
60
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001
12
mJ
10
10
8
6
4
2
0
8
6
4
2
0
1
0
0 10 20 30 40 50 60 70 80 90 100
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
MII 75-12 A3
J
CE
GE
= 125°C
= 50A
= 600V
= ±15V
20
single pulse
times versus collector current
times versus gate resistor
diode
40
0.001
60
IGBT
0.01
R
MID 75-12 A3
MDI 75-12 A3
G
I
C
80
t
V
V
R
T
0.1
CE
GE
J
G
= 125°C
t
E
= 600V
= 22
d(off)
= ±15V
100
off
75-12
s
E
t
W
t
t
d(off)
f
f
off
A
W
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t