MID75-12A3 IXYS, MID75-12A3 Datasheet - Page 2

• Manufacturer Part Number: MID75-12A3
• Description: MOD IGBT RBSOA 1200V 900A Y3-DCB
• Manufacturer: IXYS

Specifications of MID75-12A3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 370W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 90
• Ic80, Tc = 80°c, Igbt, (a): 60
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 5.6
• Rthjc, Max, Igbt, (k/w): 0.33
• If25, Tc = 25°c, Diode, (a): 100
• If80, Tc = 80°c, Diode, (a): 60
• Rthjc, Max, Diode, (k/w): 0.66
• Package Style: Y4-M5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
V
C
C
C
t
t
t
t
E
E
R
R
Reverse Diode (FRED)
V
I
I
t
R
R
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CES
GES
F
RM
d(on)
r
d(off)
f
rr
(BR)CES
GE(th)
CE(sat)
on
off
F
ies
oes
res
thJC
thJS
thJC
thJS
Conditions
V
I
V
V
I
with heatsink compound
I
I
T
T
I
T
with heatsink compound
C
C
F
F
F
C
C
J
GE
CE
CE
= 50 A, V
= 50 A, V
= 50 A, V
= 2 mA, V
= 50 A, V
= 125°C, V
= 25°C
= 80°C
= 0 V
Inductive load, T
I
V
= V
= 0 V, V
V
C
CE
CE
= 50 A, V
CES
= 600 V, R
= 25 V, V
GE
GE
GE
GE
CE
GE
R
= 0 V,
= 0 V, T
= 0 V, -di
= 15 V
= V
= ±20 V
= 600 V
GE
GE
GE
= ±15 V
G
= 0 V, f = 1 MHz
= 22 W
J
J
F
= 125°C
= 125°C
/dt = 400 A/ms
T
T
J
J
(T
(T
= 25°C
= 125°C
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
1200
min.
min.
4.5
Characteristic Values
Characteristic Values
0.22
0.66
1.32
typ.
typ.
100
500
200
2.2
3.3
0.5
7.6
5.6
2.2
1.8
70
70
40
6
max.
max.
±200 nA
0.33 K/W
0.66 K/W
100
6.5
2.7
2.5
1.9
60
4 mA
K/W
K/W
mA
mJ
mJ
nF
nF
nF
MII 75-12 A3
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
A
Dimensions in mm (1 mm = 0.0394")
GE
MID 75-12 A3
MDI 75-12 A3
J
J
W
W
2 - 4