MUBW30-12E6K IXYS, MUBW30-12E6K Datasheet - Page 8

• Manufacturer Part Number: MUBW30-12E6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS

Specifications of MUBW30-12E6K

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 1.18nF @ 25V
• Power - Max: 130W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 30
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 21
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.10
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.95
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
Output Inverter T1 - T6 / D1 - D6
E
I
CM
on
on
mJ
mJ
20
16
12
10
50
40
30
20
10
A
8
4
0
0
8
6
4
2
0
0
0
0
Fig. 3 Typ. turn on energy and switching
Fig. 5 Typ. turn on energy versus gate resistor
Fig. 7 Reverse biased safe operating area
E
V
V
R
T
on
VJ
CE
GE
G
200
= 68
= 600 V
= ±15 V
= 125°C
50
times versus collector current
10
400
R
T
VJ
G
100
= 68
= 125°C
600
20
V
V
I
T
C
VJ
CE
GE
800 1000 1200
= 600 V
= ±15 V
150
= 20 A
= 125°C
R
I
G
C
30
200
t
V
r
CE
A
t
d(on)
250
40
V
250
200
150
100
50
0
ns
t
E
E
Z
0.0001
thJC
off
off
0.001
0.01
K/W
mJ
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
mJ
2.0
1.5
1.0
0.5
0.0
0.1
0.00001 0.0001 0.001
10
1
0
0
Fig. 4 Typ. turn off energy and switching
Fig.6 Typ. turn off energy and switching
Fig. 8 Typ. transient thermal impedance
V
V
R
T
E
CE
GE
VJ
G
off
= 600 V
= ±15 V
= 68
= 125°C
E
50
times versus collector current
times versus gate resistor
off
10
V
V
I
T
C
VJ
CE
GE
single pulse
= 600 V
= ±15 V
100
= 20 A
= 125°C
MUBW30-12E6K
0.01
20
150
R
0.1
G
I
C
t
30
200
t
1
d(off)
A
t
diode
IGBT
t
d(off)
s
f
t
f
250
40
10
20073a
400
350
300
250
200
150
100
50
0
ns
1250
1000
750
500
250
0
ns
8 - 9
t
t