MUBW30-12E6K IXYS, MUBW30-12E6K Datasheet - Page 6

• Manufacturer Part Number: MUBW30-12E6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS

Specifications of MUBW30-12E6K

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 1.18nF @ 25V
• Power - Max: 130W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 30
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 21
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.10
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.95
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
P
Input Rectifier Bridge D8 - D13
I
F
thJC
tot
160
120
K/W
1.6
1.2
0.8
0.4
0.0
W
80
60
40
20
80
40
0.001
A
0
0
0.0
0
Fig. 4 Power dissipation versus direct output current and ambient
Fig. 6 Transient thermal impedance junction to case
Fig.  Forward current versus
T
T
0.6
temperature, sin 80°Fig.
20
VJ
VJ
voltage drop per diode
= 125°C
= 25°C
1.2
40
0.01
V
F
1.8
60
V
I
D(AV)M
2.4
80
A
0.1
I
FSM
200
150
100
A
0
50
0.001
0
20
Fig. 2 Surge overload current
50Hz, 80% V
40
0.01
60
RRM
1
80 100 120 140
T
T
T
VJ
VJ
amb
0.1
= 45°C
= 150°C
R
t
0.2 K/W
0.5 K/W
0.8 K/W
1.5 K/W
t
thA
3 K/W
5 K/W
8 K/W
s
MUBW30-12E6K
:
s
C
1
10
I
D(AV)
I
2
t
100
10
A
10
80
60
40
20
A
2
0
s
3
2
1
0
Fig. 5 Max. forward current vs.
Fig. 3 I
MUBW30-12E6K
20 40 60 80 100 120 140
case temperature
2
2
t versus time per diode
T
VJ
= 45°C
3
T
VJ
4 5 6 7 8 9
= 150°C
T
C
t
ms
20073a
C
6 - 9
10