MITB15WB1200TMH IXYS, MITB15WB1200TMH Datasheet - Page 7

• Manufacturer Part Number: MITB15WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITB15WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 29A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 100W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 61
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 29
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 20
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.2
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 20
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
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9
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5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
Typical turn on gate charge
Ic, If = 15A
Vce = 600V
Vge = +/-15V
Tvj = 125°C
Ic = 15A
Vce = 600V
Typical switching energy versus gate resistance
10
100
20
Eon
Eoff
Erec
30
200
40
50
Qg [nC]
Rg [W ]
300
60
70
400
80
90 100 110 120
500
600
30
25
20
15
10
6
5
4
3
2
1
0
5
0
100
0
Typical switching energy versus collector current
Vce = 600V
Vge = +/-15V
Rg = 75W
Tvj = 125°C
560W
Typical turn-off characteristics of free wheeling diode
150
560W
5
Eon
Eoff
Erec
Irr
trr
200
270W
10
dif/dt [A/µs]
270W
250
MITB15WB1200TMH
Ic, If [A]
300
15
350
If = 15A
Vce = 600V
Vge = +/-15V
Tvj = 125°C
20
400
75W
75W
25
450
600
550
500
450
400
350
300
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