MITB15WB1200TMH IXYS, MITB15WB1200TMH Datasheet - Page 3

• Manufacturer Part Number: MITB15WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITB15WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 29A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 100W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 61
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 29
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 20
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.2
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 20
• Rthjc, Typ, Br Chopper, (k/w): 1.2
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
t
t
t
t
E
E
RBSOA
I
(SCSOA)
R
R
Symbol
V
I
I
V
I
Q
I
t
E
R
R
Brake T7
C25
C80
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC
Brake Chopper D7
F25
F80
R
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
on
off
thJC
thCH
RRM
F
rec
thJC
thCH
G(on)
rr
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
inductive load
V
V
V
V
R
(per IGBT)
Conditions
I
V
V
di
(per diode)
I
C
C
F
F
GE
CE
GE
CE
CE
CE
GE
CE
GE
CE
R
R
G
F
= 15 A; V
= 15 A; V
= 0.5 mA; V
= 10 A; V
/dt = tbd A/µs
= V
= 600 V
= 75 W; t
= V
= ±20 V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= 600 V; I
= ±15 V; R
= ±15 V; R
= 720 V; V
RRM
CES
; V
GE
GE
GE
p
GE
GE
C
C
= 10 µs; non-repetitive
= 0 V
= 15 V
GE
GE
GE
= 0 V
G
G
G
= 0 V
= 15 A
= 15 A
= 0 V; f = 1 MHz
= 75 W; I
= 75 W
= 75 W
= V
= 15 V; I
= ±15 V;
CE
C
C
= 30 A; T
= 15 A
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
VJ
VJ
= 25°C unless otherwise stated
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 150°C
= 25°C
= 80°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
MITB15WB1200TMH
min.
min.
V
CEK
5
< V
1100
0.85
Ratings
typ.
Ratings
typ.
320
200
360
340
1.7
2.0
5.5
0.8
1.0
1.3
1.6
1.7
0.4
3.0
2.4
0.2
tbd
tbd
tbd
tbd
CES
92
55
30
60
35
68
-L
S
·d
max.
1200
max.
1200
±20
±30
100
150
I
2.2
6.5
0.6
1.2
3.3
0.1
2.5
29
20
/dt
15
10
20100906a
3 - 8
Unit
Unit
K/W
K/W
K/W
K/W
mA
mA
mA
mA
mJ
mJ
mJ
mJ
nC
µC
nA
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
W
V
V
V
A
A
V
V
V
V
A
V
A
A
V
V
A