IXSN50N60BD3 IXYS, IXSN50N60BD3 Datasheet - Page 3

• Manufacturer Part Number: IXSN50N60BD3
• Description: IGBT 75A 600V SOT-227B
• Manufacturer: IXYS

Specifications of IXSN50N60BD3

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.85nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 150
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.3
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Figure 3. Saturation Voltage Characteristics
Figure 1. Saturation Voltage Characteristics
Figure 5. Admittance Curves
100
100
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
4
0
0
T
J
T
V
= 25°C
J
= 125°C
CE
6
= 10V
2
2
T
J
= 125°C
8
V
V
V
4
4
GE
V
CE
GE
GE
V
= 15V
- Volts
= 15V
CE
10
- Volts
- Volts
6
6
T
J
12
= 25°C
13V
8
8
14
13V
11V
11V
9V
7V
7V
9V
10
10
16
Figure 6. Capacitance Curves
Figure 4. Temperature Dependence of V
Figure 2. Extended Output Characteristics
10000
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
160
120
10
80
40
0
25
0
0
V
GE
T
J
5
= 15V
= 25°C
50
4
10
T
J
15
75
V
- Degrees C
8
V
I
CE
C
CE
IXSN 50N60BD2
IXSN 50N60BD3
= 100A
-Volts
- Volts
20
100
V
12
25
GE
I
I
C
C
C
= 15V
C
C
= 50A
= 25A
oss
iss
rss
13V
11V
9V
30
f = 1Mhz
125
16
CE(sat)
35
150
40
20
3 - 5