IXSN50N60BD3 IXYS, IXSN50N60BD3 Datasheet
IXSN50N60BD3
Specifications of IXSN50N60BD3
Related parts for IXSN50N60BD3
IXSN50N60BD3 Summary of contents
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... SOT-227B, miniBLOC E 153432 IXSN50N60BD2 1 = Emitter Gate Collector Diode cathode A IXSN50N60BD3 1 = Emitter/Diode Cathode Gate Collector Diode anode W V Features A A • International standard package W miniBLOC • Aluminium nitride isolation °C - high power dissipation °C • Isolation voltage 3000 V~ °C • Very high current, fast switching IGBT & ...
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... T or 230 CES J 4.8 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J typ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN 50N60BD2 IXSN 50N60BD3 miniBLOC, SOT-227 B max screws (4x) supplied nC Dim ...
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... V - Volts CE Figure 3. Saturation Voltage Characteristics 100 V = 10V 125° Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved 13V 11V Figure 2. Extended Output Characteristics 13V 11V Figure 4. Temperature Dependence of V 10000 T = 25° Figure 6. Capacitance Curves IXSN 50N60BD2 IXSN 50N60BD3 ...
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... 100 Q - nanocoulombs g Figure 9. Gate Charge 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved (ON (OFF 100 Figure 8. Dependence of E OFF C 600 100 10 1 0.1 125 150 175 Figure 10 ...
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... 120 160 ° Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 © 2000 IXYS All rights reserved 1000 T = 100° 300V R 800 I = 60A 30A F 600 400 200 0 m 100 A/ s 1000 -di /dt F Fig. 13 Reverse recovery charge Q ...