IXGN72N60A3 IXYS, IXGN72N60A3 Datasheet - Page 6

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IXGN72N60A3

Manufacturer Part Number
IXGN72N60A3
Description
IGBT 160A 600V SOT-227B
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGN72N60A3

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 60A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
75µA
Input Capacitance (cies) @ Vce
6.6nF @ 25V
Power - Max
360W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
160
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
68
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.35
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
120
110
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
25
0
Switching Times vs. Junction Temperature
t
T
V
r
J
CE
= 125ºC , V
Switching Times vs. Gate Resistance
= 480V
35
I
5
I
C
C
= 50A
45
= 100A
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
t
d(on)
T
GE
10
J
55
= 15V
- Degrees Centigrade
- - - -
R
65
G
15
I
I
- Ohms
C
C
= 100A
= 50A
75
20
85
t
R
V
I
r
CE
G
C
= 3
= 25A
= 480V
95
25
Ω
I
C
, V
= 25A
105
t
d(on)
GE
30
= 15V
- - - -
115
125
35
120
110
100
90
80
70
60
50
40
30
20
10
35
34
33
32
31
30
29
28
27
26
90
80
70
60
50
40
30
20
10
0
20
t
R
V
Switching Times vs. Collector Current
r
G
CE
= 3Ω , V
30
= 480V
Fig. 19. Inductive Turn-on
40
GE
t
d(on)
= 15V
- - - -
I
50
C
- Amperes
60
IXGN72N60A3
70
T
J
80
= 25ºC
T
J
= 125ºC
90
IXYS REF: G_72N60A3(76)3-25-08-B
100
35
34
33
32
31
30
29
28
27
26

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