IXGN72N60A3 IXYS, IXGN72N60A3 Datasheet - Page 3

• Manufacturer Part Number: IXGN72N60A3
• Description: IGBT 160A 600V SOT-227B
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGN72N60A3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.35V @ 15V, 60A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 75µA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 360W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 160
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 68
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
120
100
120
100
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
60
40
20
80
60
40
20
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
0.4
0.4
vs. Gate-to-Emitter Voltage
I
8
C
0.6
0.6
= 120A
60A
30A
V
V
V
9
CE
CE
GE
@ 125ºC
0.8
0.8
@ 25ºC
- Volts
- Volts
- Volts
10
1.0
1.0
V
V
11
GE
GE
= 15V
1.2
1.2
= 15V
13V
11V
9V
13V
11V
12
5V
7V
1.4
T
1.4
J
13
= 25ºC
9V
7V
1.6
1.6
14
1.8
1.8
15
330
300
270
240
210
180
150
120
200
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
4.0
-50
0
V
Fig. 2. Extended Output Characteristics
GE
V
-25
4.5
GE
1
= 15V
= 15V
13V
11V
Fig. 4. Dependence of V
5.0
2
Fig. 6. Input Admittance
0
Junction Temperature
7V
9V
T
J
- Degrees Centigrade
5.5
25
3
V
V
CE
GE
IXGN72N60A3
@ 25ºC
T
J
- Volts
- Volts
6.0
= 125ºC
50
4
- 40ºC
25ºC
6.5
75
5
I
I
I
CE(sat)
C
C
C
= 120A
= 60A
= 30A
100
7.0
6
on
125
7.5
7
150
8.0
8