STGE50NC60WD STMicroelectronics, STGE50NC60WD Datasheet - Page 5

• Manufacturer Part Number: STGE50NC60WD
• Description: IGBT UFAST N-CH 100A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE50NC60WD

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 4.7nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Transistor Type: IGBT
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8781-5

STGE50NC60WD
Table 6.
Table 7.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
2. Turn-off losses include also the tail of the collector current
Symbol
(di/dt)
(di/dt)
Symbol
t
t
t
t
E
E
E
E
t
t
d(Voff)
d(Voff)
r(Voff)
r(Voff)
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
d(on)
d(on)
E
E
on
off
on
off
t
t
t
t
r
r
f
f
ts
ts
(1)
(2)
(1)
(2)
on
on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
Figure 18
V
R
Tj = 125°C
Figure 18
V
R
Figure
V
R
Tj = 125°C
Figure
V
R
Figure
V
R
Tj = 125°C
Figure
CC
CC
G
G
CC
CC
CC
CC
G
G
G
G
= 3.3Ω , V
= 3.3Ω , V
= 3.3Ω , V
= 3.3Ω , V
= 3.3Ω , V
= 3.3Ω , V
= 390V, I
= 390V, I
= 390V, I
= 390V, I
= 390V, I
= 390V, I
Test conditions
Test conditions
16,
16,
16,
16,
Figure 18
Figure 18
Figure 18
Figure 18
GE
GE
GE
GE
GE
GE
C
C
C
C
C
C
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 40A
= 40A
= 40A
= 40A
= 40A
= 40A
Figure 18
Electrical characteristics
Min.
Min.
If the IGBT is offered in
2400
2020
1545
Typ.
Typ.
240
280
365
560
925
635
910
52
17
50
19
31
35
59
63
Max.
Max.
1260
470
790
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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