BYV541V-200 STMicroelectronics, BYV541V-200 Datasheet - Page 3

• Manufacturer Part Number: BYV541V-200
• Description: DIODE FAST REC 200V 50A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of BYV541V-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 50A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 50A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2689-5

Fig.1 : Average forward power dissipation versus
average forward current.
45
40
35
30
25
20
15
10
Fig.3 : Forward voltage drop versus forward
current (maximum values).
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
0.001
0
0
P F(av)(W)
I M(A)
1
VFM(V)
Tj=125 C
IM
5
o
10
t
=0.5
=0.05
15
0.01
10
20
I F(av)(A)
=0.1
25
IFM(A)
t(s)
30
=0.2
0.1
35
100
=tp/T
=0.5
40
Tc=25 C
Tc=50 C
Tc=90 C
T
45
=1
tp
o
o
o
500
50
1
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
1.0
0.1
Fig.2 : Peak current versus form factor.
1000
Fig.6
temperature. (duty cycle : 0.5)
60
50
40
30
20
10
0
800
600
400
200
1.0E-03
0
I
K
F(av)(A)
0
K =
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
= 0 . 1
I M(A)
= 0 . 2
Zth(j-c) (tp. )
=0.5
Single pulse
20
=tp/T
= 0 . 5
:
Rth(j-c)
P=30W
P=15W
Average
P=45W
T
40
1.0E-02
tp
60
current
tp(s)
80
P=60W
BYV54V / BYV541V
Tamb( C)
100
1.0E-01
Rth(j-a)=Rth(j-c)
versus
o
120
=tp/T
=tp/T
140
T
ambient
tp
T
1.0E+00
I
tp
M
160
3/5