STTH61R04TV1 STMicroelectronics, STTH61R04TV1 Datasheet - Page 4

• Manufacturer Part Number: STTH61R04TV1
• Description: DIODE ULT FAST 400V 30A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH61R04TV1

• Voltage - Forward (vf) (max) @ If: 1.45V @ 30A
• Current - Reverse Leakage @ Vr: 15µA @ 400V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 65ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/7
Figure 5.
Figure 7.
Figure 9.
160
150
140
130
120
110
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4000
3500
3000
2500
2000
1500
1000
90
80
70
60
50
40
30
20
10
500
0
25
0
10
Q
0
RR
V
I
F
R
= 100A
[T ]/Q
=320V
j
RR
[T = 125° C] and I
Reverse recovery time versus
dI
Relative variations of dynamic
parameters versus junction
temperature
50
Forward recovery time versus dI
(typical values)
100
j
F
/dt (typical values)
I
RM
Q
RR
75
200
dI
RM
F
/dt(A/µs)
[T ]/I
T
100
j
j
(°C)
T
RM
j
T
=125 °C
j
=25 °C
[T = 125° C]
100
j
300
V
FR
125
400
=1.1 x V
T
dI
I
j
=125°C
F
V
=30A
F
I
F
R
/dt(A/µs)
= 60A
=200V
F
max.
1000
150
500
F
/dt
Figure 6.
Figure 8.
Figure 10. Junction capacitance versus
1000
600
550
500
450
400
350
300
250
200
150
100
12
11
10
100
50
9
8
7
6
5
4
3
2
1
0
10
0
0
10
1
T
I
j
=125°C
F
=30A
V
I
50
F
R
= 30 A
=320V
100
Reverse recovery charges versus
dI
Transient peak forward voltage
versus dI
reverse voltage applied (typical
values)
F
/dt (typical values)
150
10
200
F
/dt (typical values)
dI
F
V
/dt(A/µs)
250
100
R
(V)
T
T
j
=125 °C
j
=25 °C
300
100
350
dI
STTH61R04TV
F
/dt(A/µs)
400
V
OSC
F=1MHz
T
=30mV
j
=25°C
450
RMS
1000
1000
500