VUM33-05N IXYS, VUM33-05N Datasheet - Page 3

• Manufacturer Part Number: VUM33-05N
• Description: MOSFET STAGE BOOST 500V V1-B
• Manufacturer: IXYS

Specifications of VUM33-05N

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 54A
• Diode Type: Single Phase - PFC Module
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: Screw Mount
• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 47
• Rds(on), Max, Tj = 25°c, (mohm): 0.12
• Vrrm, Boost Diodes, (v): 600
• Vrrm, Rectifier Diodes, (v): 800
• Id(av) @ Tc, Rectifier Diodes, (a): -
• Package Style: V1-B-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
norm.
I
BV
V
Fig. 3 Typ. output characteristic
Fig. 6 Typ. normalized BV
Fig. 9 Typ. transconductance,
D
g
GS(th)
1.4
1.2
1.0
0.8
0.6
0.4
fs
80
70
60
50
40
30
20
10
80
60
40
20
DSS
s
A
0
0
-50
0
0
I
V
g
D
fs
GS(th)
= f (V
= f (I
20
2
V
0
GS(th)
= f (T
V
D
DS
) (MOSFET)
DS
T
) (MOSFET)
40
V
4
J
VJ
50
) (MOSFET)
60
6
I
D
V
100
DSS
V
DSS
GS
80
8
10 V
= f (T
= 5 V
°C
A
V
7 V
6 V
150
100
10
VJ
)
V
I
Fig. 4 Typ. transfer characteristics
Fig. 7 Typ. turn-on gate charge
characteristics, V
Fig. 10 Forward current versus
D
I
GS
F
120
100
80
70
60
50
40
30
20
10
12
10
80
60
40
20
A
A
V
0
8
6
4
2
0
0
0.5
2
0
I
D
voltage drop (Boost Diode)
= f (V
T
T
T
VJ
VJ
VJ
3
100
T
T
1.0
=150°C
=100°C
= 25°C
VJ
VJ
V
I
I
V
D
G
= 25°C
= 125°C
GS
DS
GS
= 18 A
= 10 mA
) (MOSFET)
= 250 V
4
GS
200
1.5
= f (Q
Q
V
g
F
5
g
) (MOSFET)
300
2.0
6
nC
V
V
400
2.5
7
norm.
Q
R
rr
Fig. 5 Typ. normalized
Fig. 8 Typ. capacitances C = f (V
Fig. 11 Recovery charge versus -di
DS(on)
100
C
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
μC
10
nF
1
-50
10
0
T
V
I
V
D
R
J
R
f = 1 MHz (MOSFET)
=18A
= 350 V
=100°C
(Boost Diode)
DS(on)
I
I
I
I
F
F
F
F
5
0
= 37 A
= 74 A
= 37 A
= 18.5 A
T
C
VUM 33-05N
= f (T
VJ
iss
-di
100
VJ
10
50
F
) (MOSFET)
/dt
typ.
V
DS
max.
100
15
A/μs
C
°C
V
20070704a
C
oss
rss
1000
3 - 4
DS
150
20
),
F
/dt