HTMS1001FTB/AF,115 NXP Semiconductors, HTMS1001FTB/AF,115 Datasheet - Page 9

• Manufacturer Part Number: HTMS1001FTB/AF,115
• Description: RFID HTAG 128BIT MEM SOT1122
• Manufacturer: NXP Semiconductors
• Series: HITAG® µr

Specifications of HTMS1001FTB/AF,115

• Rf Type: Read / Write
• Frequency: 100kHz ~ 150kHz
• Features: ISO/IEC 11784/11785
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935289811115

NXP Semiconductors
7. Functional description
152931
Product data sheet
PUBLIC
7.1.1 Memory organization HITAG μ transponder ICs
7.1 Memory organization
The EEPROM has a capacity of up to 1760 bit and is organized in blocks of 4 bytes each
(1 block = 32 bits). A block is the smallest access unit.
The HITAG µ transponder IC is available with different memory sizes as shown in
“Memory organization HITAG m
Advanced (512 bit)”
For permanent lock of blocks please refer to
Table 3.
[1]
[2]
Block address
FFh
FEh
03h
02h
01h
00h
RO: Read without password, write with password
R/W: Read and write without password
Memory organization HITAG μ (128-bit)
and
Rev. 3.1 — 21 January 2010
Content
User Config
PWD
ISO 11784/ISO 11785 128 bit TTF data
Table 5 “Memory organization HITAG µ Advanced+ (1760
152931
(128-bit)”,
Table 4 “Memory organization HITAG µ
Section 13.9 “LOCK
BLOCK”.
Password Access
bit3=0 R/W
bit3=1 RO
© NXP B.V. 2010. All rights reserved.
HITAG µ
Transponder IC
[1]
[2]
Table 3
bit)”.
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