MFRX85201HD/D4110: NXP Semiconductors, MFRX85201HD/D4110: Datasheet

MFRX85201HD/D4110:

Manufacturer Part Number

MFRX85201HD/D4110:

Description

MOD SECURITY READER CUST 48HLQFN

Manufacturer

NXP Semiconductors

Datasheets

1.BLF6G21-10G112.pdf (11 pages)

2.MFRX85201HDD4110.pdf (8 pages)

Specifications of MFRX85201HD/D4110:

Rf Type

Read / Write

Frequency

13.56MHz

Features

ISO14443A / Mifare

Package / Case

48-LQFN Exposed Pad

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

935290533551

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1. Product proﬁle

CAUTION

1.1 General description

1.2 Features

10 W LDMOS power transistor for base station applications at frequencies from

HF to 2200 MHz

Table 1.

[1]

Mode of operation

2-carrier W-CDMA

1-carrier W-CDMA

BLF6G21-10G

Power LDMOS transistor

Rev. 02 — 11 December 2009

= 100 mA; T

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an I

Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 28 V and an I

Easy power control

Integrated ESD protection

Excellent ruggedness

High efﬁciency

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Average output power = 0.7 W

Gain = 18.5 dB

Efﬁciency = 15 %

ACPR = 50 dBc

Average output power = 2 W

Gain = 19.3 dB

Efﬁciency = 31 %

ACPR = 39 dBc

Typical performance

case

= 25 C in a common source class-AB production test circuit.

(MHz)

2110 to 2170

(V)

of 100 mA:

(W)

0.7

L(AV)

(dB)

18.5

19.3

Product data sheet

(%)

ACPR

(dBc)

[1]

Related parts for MFRX85201HD/D4110:

MFRX85201HD/D4110: Summary of contents

Page 1

BLF6G21-10G Power LDMOS transistor Rev. 02 — 11 December 2009 1. Product proﬁle 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 100 mA ...

Page 2

... NXP Semiconductors I Excellent thermal stability I No internal matching for broadband operation I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power ampliﬁers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range ...

Page 3

... NXP Semiconductors 5. Thermal characteristics Table 5. Symbol Parameter R th(j-case) [1] Thermal resistance is determined under speciﬁed RF operating conditions 6. Characteristics Table 6. Characteristics unless otherwise speciﬁed j Symbol Parameter V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain leakage current DSS I drain cut-off current DSX ...

Page 4

... NXP Semiconductors 7 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 1. 19 (dB) 18.5 17.5 (1) (2) (3) 16 100 mA ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 2. CW power gain as a function of load power; typical values BLF6G21-10G_2 Product data sheet (dB 100 mA input return loss as a function of load power; typical values ...

Page 5

... NXP Semiconductors 7.3 1-carrier W-CDMA ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 4. 20 (dB) 19.6 19.2 18.8 18.4 18 100 mA ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 5. 1-carrier W-CDMA power gain as a function of load power; typical values BLF6G21-10G_2 Product data sheet (dB 100 mA. ...

Page 6

... NXP Semiconductors 30 ACPR (dBc) 40 (3) (2) ( 100 mA; carrier spacing 5 MHz ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 7. 1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values 7.4 2-carrier W-CDMA ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 9. BLF6G21-10G_2 Product data sheet ...

Page 7

... NXP Semiconductors 20 (dB) 19.6 19.2 18.8 18.4 18 100 mA ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 10. 2-carrier W-CDMA power gain as a function of load power; typical values 30 ACPR (dBc 0 100 mA; carrier spacing 5 MHz ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 12. 2-carrier W-CDMA adjacent channel power ratio as a function of load power ...

Page 8

... NXP Semiconductors 8. Package outline Ceramic surface-mounted package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 1.35 0.23 2.95 5.16 mm 1.19 0.18 2.29 5.00 0.053 0.009 0.116 0.203 inches 0.047 0.007 0.090 0.197 OUTLINE VERSION IEC SOT538A Fig 14. Package outline SOT538A ...

Page 9

... NXP Semiconductors 9. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM HF LDMOS PAR PDPCH PHS RF VSWR W-CDMA 10. Revision history Table 10. Revision history Document ID Release date BLF6G21-10G_2 20091211 • Modiﬁcations: Section 6 on page • Table 7 on page • Section 7.1 on page • ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 13. Contents 1 Product proﬁ 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation 7 7.3 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations ...

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