SI4200-GM Silicon Laboratories Inc, SI4200-GM Datasheet - Page 9

• Manufacturer Part Number: SI4200-GM
• Description: IC TXRX TRI-BAND 32MLP
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4200-GM

• Frequency: 850MHz, 900MHz, 1.8GHz
• Modulation Or Protocol: GSM
• Applications: Cellular, GSM Cellular Radio
• Voltage - Supply: 2.7 V ~ 3.3 V
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Operating Temperature: -
• Sensitivity: -
• Memory Size: -
• Data Rate - Maximum: -
• Current - Transmitting: -
• Current - Receiving: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Table 5. Receiver Characteristics (Continued)
(V
Parameter
LNA Gain Control Range
Analog PGA Control Range
Analog PGA Step Size
Digital PGA Control Range
Digital PGA Step Size
Maximum Differential Output Voltage
Output Common Mode Voltage
Differential Output Offset Voltage
Baseband Gain Error
Baseband Phase Error
Output Load Resistance
Output Load Capacitance
Group Delay
Differential Group Delay
Powerup Settling Time
Notes:
DD
1. GSM input pins RFIGP and RFIGN. DCS input pins RFIDP and RFIDN. PCS input pins RFIPP and RFIPN. On the Si4200DB, the PCS
2. Measurement is performed with a 2:1 balun (50 Ω input, 200 Ω balanced output) and includes matching network and PCB losses.
3. Specifications guaranteed by characterization.
4. Input signal at balun is –102 dBm. SNR at baseband output is 9 dB.
5. AGAIN[2:0]=000b, LNAG[1:0] = 01b, LNAC[1:0] = 01b.
6. AGAIN[2:0]=000b, LNAG[1:0] = 00b, LNAC[1:0] = 00b.
7. Voltage gain is defined as the differential rms voltage at the RXIP/RXIN pins or RXQP/RXQN pins divided by the rms voltage at the
8. Voltage gain is defined as the differential rms voltage at the LNA output divided by the rms voltage at the balun output.
9. Output pins RXIP, RXIN, RXQP, RXQN.
10. The baseband signal path is entirely digital. Gain, phase, and offset errors at the baseband outputs are because of the Si4201 D/A
11. Group delay is measured from antenna input to baseband outputs. Differential group delay is measured in-band.
12. Includes settling time of the Si4134T frequency synthesizer with 13 MHz DCXO output settled. Settling to 5 degrees phase error
= 2.7 to 3.0 V, T
input should be used for either PCS 1900 or DCS 1800 bands.
Measured at max gain (AGAIN[2:0] =100b, LNAG[1:0]
are referred to 290 °K. Insertion loss of the balun is removed.
balun input with DACFS[1:0] = 01 and CSEL = 1. Gain is 1.5 dB higher with CSEL = 0. Minimum and maximum values do not include
the variation in the Si4201 DAC full scale voltage (also see Maximum Differential Output Voltage specification).
converters. Offsets can be measured and calibrated out. See ZERODEL[2:0] in the register description.
measured at RXIP, RXIN, RXQP, and RXQN pins.
11
A
= –20 to 85 °C)
9,10
3,12
9,10
11
9
9
9
9,10
9
Symbol
∆G
∆G
∆G
R
C
APGA
DPGA
LNA
L
L
=
01b, LNAC[1:0]
Rev. 1.2
DACCM[1:0] = 01
DACCM[1:0] = 10
DACCM[1:0] = 00
From powerdown
DACFS[1:0] = 00
DACFS[1:0] = 01
DACFS[1:0] = 10
DCS/PCS inputs
Test Condition
Single-ended
Single-ended
GSM input
CSEL = 0
CSEL = 1
CSEL = 0
CSEL = 1
=
01b) unless otherwise noted. Noise figure measurements
1.05
1.15
Min
3.2
0.8
1.6
2.8
0.8
13
13
10
—
—
—
—
—
—
—
—
—
—
—
4
1.25
1.35
Typ
200
4.0
1.0
2.0
3.5
1.0
17
16
63
—
—
—
—
—
—
—
—
—
8
1
Max
1.45
1.55
220
1.2
2.4
4.2
1.2
4.8
1.5
21
12
19
50
10
22
16
—
—
—
1
1
1
Aero+
V
V
V
Unit
deg
mV
kΩ
dB
dB
dB
dB
dB
dB
pF
µs
µs
µs
µs
µs
PPD
PPD
PPD
%
V
V
V
9