MW7IC18100NBR1 Freescale Semiconductor, MW7IC18100NBR1 Datasheet - Page 8

no-image

MW7IC18100NBR1

Manufacturer Part Number
MW7IC18100NBR1
Description
IC PWR AMP RF LDMOS TO272-14
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW7IC18100NBR1

Current - Supply
1.18A
Frequency
1.805GHz ~ 2.05GHz
Gain
30dB
P1db
51.93dBm
Package / Case
TO-272-14
Rf Type
GSM, EDGE
Test Frequency
1.9GHz
Voltage - Supply
24 ~ 32V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC18100NBR1
Manufacturer:
FREESCALE
Quantity:
100
8
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
31
30
29
28
27
−55
−60
−65
−70
−75
−80
−85
−50
−60
−70
−80
−90
1880
0
1
Figure 15. Power Gain versus Output Power
Figure 17. Spectral Regrowth at 400 kHz and
SR @ 400 kHz
V
I
f = 1960 MHz, EDGE Modulation
DQ1
SR @ 600 kHz
DD1
Figure 19. Spectral Regrowth at 600 kHz
1900
= 215 mA, I
= 28 Vdc
50
P
1920
600 kHz versus Frequency
P
out
V
I
f = 1960 MHz, EDGE Modulation
DQ1
out
DD1
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) AVG.
versus Output Power
DQ2
= 215 mA, I
= 28 Vdc, V
f, FREQUENCY (MHz)
1940
= 800 mA
V
50 W Avg.
DD
40 W Avg.
10
P
100
out
= 24 V
1960
DQ2
DD2
= 50 W Avg.
= 815 mA
= 28 Vdc
1980
TYPICAL CHARACTERISTICS — 1900 MHz
28 V
30 W Avg.
T
150
I
I
f = 1960 MHz
2000
C
DQ1
DQ2
= 85_C
30 W Avg.
= 180 mA
= 1000 mA
40 W Avg.
32 V
2020
100
−30_C
25_C
200
2040
200
16
14
12
10
8
6
4
2
0
1
−40
−50
−60
−70
−80
5
4
3
2
1
0
1880
Figure 20. EVM and Power Added Efficiency
V
I
I
f = 1960 MHz
EDGE Modulation
1
DQ1
DQ2
DD1
V
I
EDGE Modulation
DQ1
V
I
f = 1960 MHz, EDGE Modulation
= 215 mA
= 800 mA
DD1
DQ1
30 W Avg.
= 28 Vdc
DD1
1900
Figure 18. Spectral Regrowth at 400 kHz
= 215 mA, I
= 28 Vdc
= 215 mA, I
= 28 Vdc
Figure 16. EVM versus Frequency
P
out
P
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
1920
P
= 50 W Avg.
out
DQ2
40 W Avg.
DQ2
, OUTPUT POWER (WATTS) AVG.
versus Output Power
= 800 mA
1940
f, FREQUENCY (MHz)
= 800 mA
10
PAE
10
1960
EVM
Freescale Semiconductor
1980
−30_C
T
T
C
C
= −30_C
= 85_C
2000
RF Device Data
25_C
100
25_C
2020
25_C
85_C
100
85_C
200
80
70
60
50
40
30
10
0
20
2040
200

Related parts for MW7IC18100NBR1