MW7IC18100NBR1 Freescale Semiconductor, MW7IC18100NBR1 Datasheet - Page 16

• Manufacturer Part Number: MW7IC18100NBR1
• Description: IC PWR AMP RF LDMOS TO272-14
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC18100NBR1

• Current - Supply: 1.18A
• Frequency: 1.805GHz ~ 2.05GHz
• Gain: 30dB
• P1db: 51.93dBm
• Package / Case: TO-272-14
• Rf Type: GSM, EDGE
• Test Frequency: 1.9GHz
• Voltage - Supply: 24 ~ 32V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

16
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
33
32
31
30
29
28
27
1
1000 mA
750 mA
500 mA
Figure 31. Two - Tone Power Gain versus
V
f = 1840 MHz
DD
= 28 Vdc, I
Output Power @ I
P
out
, OUTPUT POWER (WATTS) CW
I
DQ2
DQ1
= 1500 mA
= 180 mA
10
Figure 29. Power Gain, Input Return Loss and Power Added
Added Efficiency versus Frequency @ P
Figure 30. Power Gain, Input Return Loss, EVM and Power
32
31
30
29
28
27
26
32
31
30
29
28
27
26
25
Efficiency versus Frequency @ P
DQ1
1760
1760 1780 1800
TYPICAL CHARACTERISTICS — 1800 MHz
1250 mA
EVM
PAE
G
IRL
G
=180 mA
ps
ps
1780
PAE
1800 1820
100
V
I
DQ1
V
I
EDGE Modulation
DD1
DQ1
DD1
1820
= 180 mA, I
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 28 Vdc, P
= 215 mA, I
= 28 Vdc, P
200
1840
1840
IRL
DQ2
out
DQ2
out
1860
1860
= 100 W CW
= 1000 mA
= 40 W Avg.
= 800 mA
1880 1900
1880 1900
out
36
35
34
33
32
31
30
29
28
27
26
1
= 100 Watts CW
out
135 mA
180 mA
225 mA
90 mA
Figure 32. Two - Tone Power Gain versus
= 40 Watts Avg.
I
DQ1
1920
1920
= 270 mA
Output Power @ I
P
out
1940
1940
, OUTPUT POWER (WATTS) CW
55
50
45
40
35
30
25
60
50
40
30
20
10
0
10
−10
−15
−20
−25
V
f = 1840 MHz
DQ2
Freescale Semiconductor
DD
−10
−15
−20
−25
−30
= 28 Vdc, I
= 1000 mA
RF Device Data
DQ2
= 1000 mA
100
200