MW7IC2240NBR1 Freescale Semiconductor, MW7IC2240NBR1 Datasheet - Page 7

• Manufacturer Part Number: MW7IC2240NBR1
• Description: IC PWR AMP RF 4W TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2240NBR1

• Current - Supply: 420mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 30dB
• P1db: 40W
• Package / Case: TO-272-16
• Rf Type: W-CDMA
• Test Frequency: 2.14GHz
• Voltage - Supply: 32V
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 4W
• Power Gain (typ)@vds: 28dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Operating Temp Range: -65C to 225C
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
35
34
33
32
31
30
29
1
248 mA
165 mA
I
DQ2
Figure 6. Power Gain versus Output Power
= 495 mA
P
out
, OUTPUT POWER (WATTS) CW
413 mA
@ I
DQ1
Figure 5. Single Carrier W - CDMA Broadband Performance
= 130 mA
330 mA
−10
−20
−30
−40
−50
−60
V
I
f = 1960 MHz
37
36
35
34
33
32
31
30
29
28
27
DQ1
DD
1880
10
1
= 28 Vdc
= 130 mA
Figure 8. Intermodulation Distortion Products
IRL
PAE
V
I
(f1 + f2)/2 = Center Frequency of 1960 MHz
G
DQ2
DD
ps
ACPR
1900
= 28 Vdc, P
= 330 mA, Two−Tone Measurements
IM5−L
IM5−U
TYPICAL CHARACTERISTICS
1920
versus Two - Tone Spacing
V
I
Channel Bandwidth, Input Signal PAR = 7.5 dB
DQ2
DD
out
@ P
TWO−TONE SPACING (MHz)
IM3−L
IM3−U
= 28 Vdc, P
= 22 W (PEP), I
= 330 mA, Single−Carrier W−CDMA, 3.84 MHz
1940
f, FREQUENCY (MHz)
out
50
= 4 Watts Avg.
1960
10
out
@ 0.01% Probability on CCDF
IM7−L
IM7−U
= 4 W (Avg.), I
DQ1
1980
= 130 mA
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
35
34
33
32
31
30
29
28
1
2000
DQ1
I
80 mA
98 mA
65 mA
DQ1
163 mA
Figure 7. Power Gain versus Output Power
= 130 mA
= 195 mA
2020
P
2040
out
100
, OUTPUT POWER (WATTS) CW
18
17
16
15
14
−47
−48
−49
−50
−51
−52
@ I
DQ2
= 330 mA
−10
−12
−14
−16
−18
−20
10
V
I
f = 1960 MHz
DQ2
DD
= 28 Vdc
= 330 mA
50
7