MW7IC2240NBR1 Freescale Semiconductor, MW7IC2240NBR1 Datasheet - Page 28

• Manufacturer Part Number: MW7IC2240NBR1
• Description: IC PWR AMP RF 4W TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2240NBR1

• Current - Supply: 420mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 30dB
• P1db: 40W
• Package / Case: TO-272-16
• Rf Type: W-CDMA
• Test Frequency: 2.14GHz
• Voltage - Supply: 32V
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 4W
• Power Gain (typ)@vds: 28dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Operating Temp Range: -65C to 225C
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
28
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
Feb. 2009
Nov. 2009
Date
• Initial Release of Data Sheet
• Updated Human Body Model ESD from Class 1C to 1B to reflect Human Body Model actual test data,
• Fig. 13, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single - Carrier Test Signal and
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 2
Fig. 14, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal, p. 9
Product Documentation, Application Notes, p. 28
p. 28
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data