MW6IC1940NBR1 Freescale Semiconductor, MW6IC1940NBR1 Datasheet

IC POWER AMP RF TO-272-16

MW6IC1940NBR1

Manufacturer Part Number
MW6IC1940NBR1
Description
IC POWER AMP RF TO-272-16
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW6IC1940NBR1

Current - Supply
200mA
Frequency
1.92GHz ~ 2GHz
Gain
27dB
Package / Case
TO-272-16
Rf Type
Cellular, W-CDMA
Voltage - Supply
28V
Manufacturer's Type
Power Amplifier
Number Of Channels
1
Frequency (max)
2GHz
Operating Supply Voltage (min)
26V
Operating Supply Voltage (typ)
28V
Operating Supply Voltage (max)
32V
Package Type
TO-272 WB EP
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6IC1940NBR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006--2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
matching that makes it usable from 1920 to 2000 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical 2--Carrier W--CDMA Performance: V
Driver Applications
• Typical 2--Carrier W--CDMA Performance: V
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
The MW6IC1940GNB wideband integrated circuit is designed with on--chip
I
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
I
Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on
CCDF.
Output Power
P
and Common Source Scattering Parameters
with Enable/Disable Function
DQ2
DQ2
out
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
ACPR @ 5 MHz Offset — - -46 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - -62 dBc in 3.84 MHz Bandwidth
V
V
Power Gain — 28.5 dB
Power Added Efficiency — 13.5%
IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth
Power Gain — 27 dB
IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth
V
V
RF
.
DS1
GS1
GS2
DS1
= 440 mA, P
= 350 mA, P
in
out
out
Figure 1. Functional Block Diagram
= 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth =
= 26 dBm, Full Frequency Band (1920--2000 MHz),
Temperature Compensation
Quiescent Current
(1)
DD
DD
(1)
= 28 Volts, I
= 28 Volts, I
DQ1
DQ1
= 200 mA,
= 200 mA,
RF
out
/V
DS2
Document Number: MW6IC1940N--1
Note: Exposed backside of the package is
INTEGRATED POWER AMPLIFIER
MW6IC1940GNBR1
V
V
1920- -2000 MHz, 40 W, 28 V
GND
V
V
GND
RF
GS1
GS2
DS1
DS1
Figure 2. Pin Connections
the source terminal for the transistors.
NC
NC
NC
NC
RF LDMOS WIDEBAND
in
TO- -272 WB- -16 GULL
CASE 1329A- -04
2 x W- -CDMA
10
11
1
2
3
4
5
6
7
8
9
(Top View)
PLASTIC
MW6IC1940GNBR1
Rev. 3.1, 12/2009
16
15
14
13
12
GND
NC
RF
V
NC
GND
DS2
out
/
1

Related parts for MW6IC1940NBR1

MW6IC1940NBR1 Summary of contents

Page 1

... Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2006--2009. All rights reserved. RF Device Data Freescale Semiconductor ...

Page 2

... Package Peak Temperature 260 Min Typ Max = 28 Vdc 200 mA 440 mA, DD DQ1 DQ2 26 28.5 31.5 12.5 13.5 — — --43 --40 — --46 --43 — --15 --10 (continued) RF Device Data Freescale Semiconductor Unit Vdc Vdc °C °C °C dBm Unit °C/W Unit °C Unit dB % dBc dBc dB ...

Page 3

... Duty Cycle) 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) A Symbol ...

Page 4

... Microstrip PCB Taconic TLX8--0300, 0.030″, ε * Variable for tuning Description C3225X5R1H225MT ATC100B0R5BT500XT ATC100B1R5BT500XT ATC100B0R2BT500XT ATC100B100JT500XT CRCW12064701FKEA CRCW12063301FKEA V D2 C10 C2 RF OUTPUT C11 C3 = 2.55 r Part Number Manufacturer TDK ATC ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 5

... V D1 MW6IC1940NB Rev Figure 4. MW6IC1940GNBR1 Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 C11 MW6IC1940GNBR1 5 ...

Page 6

... Watts Avg. out --55 --60 --12 --14 --65 --16 --18 --70 --20 2000 = 26 dBm Avg. out 250 mA = 300 mA 150 mA 100 Vdc 440 mA DQ2 10 100 P , OUTPUT POWER (WATTS) PEP out Output Power @ I = 440 mA DQ2 RF Device Data Freescale Semiconductor 200 ...

Page 7

... Pulsed CW, 12 μsec(on), 1% Duty Cycle 1965 MHz INPUT POWER (dBm) in Figure 13. Pulsed CW Output Power versus Input Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS --20 --25 --30 --35 --40 440 mA --45 -- 1955 MHz 1965 MHz Two--Tone Measurements, 10 MHz Tone Spacing --60 100 1 Figure 10. Third Order Intermodulation Distortion ...

Page 8

... JUNCTION TEMPERATURE (° Vdc 4.5 W Avg., and PAE = 13.5%. DD out I = 200 mA DQ1 I = 440 mA DQ2 f = 1960 MHz OUTPUT POWER (WATTS) CW out T = --30_C C 25_C 85_C = 4.5 W Avg. out = 440 mA DQ2 1840 1880 1920 1960 f, FREQUENCY (MHz) 230 250 RF Device Data Freescale Semiconductor 80 2000 ...

Page 9

... MHz f = 2040 MHz Figure 20. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Ω load Vdc 200 mA 440 mA DQ1 DQ2 out f Z source MHz Ω 1880 69.33 + j26.65 3.65 -- j5.717 1900 65.20 + j19.39 3.55 -- j5.95 1920 61.07 + j12.13 3.45 -- j6.18 1940 56 ...

Page 10

... RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor ( 200 mA 440 mA DQ1 DQ2 ∠ φ 0.418 --141 0.003 0.367 --152 0.004 0.319 --162 0 ...

Page 12

... MW6IC1940GNBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MW6IC1940GNBR1 13 ...

Page 14

... MW6IC1940GNBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... Corrected mm dimension L for gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Corrected L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number. • Data sheet archived. Part no longer manufactured. • Updated Product Documentation adding AN1907 and AN3263 Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description 2 ...

Page 16

... Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN13232 • Rev. 3.1 (MW6IC1940GNBR1) data sheet archived. Part no longer manufactured. See Rev. 4.1 for MW6IC1940NBR1. MW6IC1940GNBR1 16 REVISION HISTORY (continued) Description RF Device Data ...

Page 17

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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