MW6IC2015NBR1 Freescale Semiconductor, MW6IC2015NBR1 Datasheet - Page 8

• Manufacturer Part Number: MW6IC2015NBR1
• Description: IC PWR AMP RF 26V 15W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW6IC2015NBR1

• Current - Supply: 100mA
• Frequency: 1.8GHz ~ 1.99GHz
• Gain: 26dB
• Package / Case: TO-272-16
• Rf Type: Cellular, W-CDMA, GSM, EDGE, TDMA, CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MW6IC2015NBR1 MW6IC2015GNBR1
8
10
28
27
26
25
24
8
6
4
2
0
1850
1
V
I
I
f = 1960 MHz
EDGE Modulation
Figure 14. Broadband Frequency Response
DQ1
DQ2
V
P
I
I
DD
DQ1
DQ2
Figure 16. EVM and Power Added Efficiency
DD
out
= 26 Vdc
= 100 mA
= 170 mA
= 35 dBm CW
= 26 Vdc
= 100 mA
= 170 mA
1900
P
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
PAE
f, FREQUENCY (MHz)
1950
S21
S11
TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
2000
T
C
= −30_C
10
85_C
2050
EVM
25_C
2100
30
50
40
30
10
0
20
−10
−15
−20
−25
−30
−50
−55
−60
−65
−70
−75
−80
−85
32
30
28
26
24
22
1880
Figure 17. Spectral Regrowth at 400 and 600 kHz
0.1
V
I
EDGE Modulation
DQ2
SR @ 600 kHz
SR @ 400 kHz
V
I
Two−Tone Measurements, Center Frequency = 1960 MHz
DD
DQ1
DD
= 26 Vdc, I
= 170 mA, f = 1960 MHz
1900
Figure 15. Power Gain versus Frequency
= 26 Vdc, P
= 100 mA, I
P
out
1920
DQ1
, OUTPUT POWER (WATTS) AVG.
versus Output Power
out
DQ2
= 100 mA
= 7.5 W (Avg.)
= 170 mA
f, FREQUENCY (MHz)
1940
1
85_C
25_C
T
−30_C
C
Freescale Semiconductor
1960
= −30_C
25_C
T
C
= −30_C
1980
RF Device Data
85_C
10
2000
25_C
85_C
2020
30