MW6IC2015NBR1 Freescale Semiconductor, MW6IC2015NBR1 Datasheet - Page 14

• Manufacturer Part Number: MW6IC2015NBR1
• Description: IC PWR AMP RF 26V 15W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW6IC2015NBR1

• Current - Supply: 100mA
• Frequency: 1.8GHz ~ 1.99GHz
• Gain: 26dB
• Package / Case: TO-272-16
• Rf Type: Cellular, W-CDMA, GSM, EDGE, TDMA, CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MW6IC2015NBR1 MW6IC2015GNBR1
14
−30
−40
−50
−60
−70
32
30
28
26
24
22
0.1
0.1
Figure 27. Intermodulation Distortion Products
V
I
(f1 + f2)/2 = Center Frequency of 1840 MHz
5th Order
DQ2
DD
3rd Order
7th Order
Figure 30. Power Gain and Power Added
= 26 Vdc, P
= 170 mA, Two−Tone Measurements
Efficiency versus CW Output Power
T
C
= −30_C
85_C
25_C
P
out
out
, OUTPUT POWER (WATTS) CW
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 7.5 W (Avg.), I
1
1
V
I
DQ2
DD
= 26 Vdc, I
= 170 mA, f = 1840 MHz
TYPICAL CHARACTERISTICS — 1805 - 1880 MHz
40
35
30
25
20
15
10
DQ1
5
0
PAE
0.1
Figure 29. 2 - Carrier W - CDMA ACPR, IM3, Power
= 100 mA
2−Carrier W−CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
V
I
f1 = 1835 MHz, f2 = 1845 MHz
DQ1
IM3
DD
10
25_C
DQ1
= 26 Vdc
= 100 mA, I
= 100 mA
Gain and Power Added Efficiency
PAE
10
P
out
−30_C
G
DQ2
, OUTPUT POWER (WATTS) AVG.
ps
85_C
versus Output Power
= 170 mA
ACPR
30
100
1
50
40
30
20
10
0
48
46
44
42
40
38
30
28
26
24
22
20
18
10
0
P1dB = 44 dBm (25 W)
Figure 31. Power Gain versus Output Power
Figure 28. Pulsed CW Output Power versus
P3dB = 44.7 dBm (30 W)
10
5
G
P
ps
15
out
, OUTPUT POWER (WATTS) CW
30
P
−20
−25
−30
−35
−40
−45
−50
−55
−60
in
, INPUT POWER (dBm)
Input Power
10
V
I
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1840 MHz
DQ1
DD
Ideal
20
= 26 Vdc
= 100 mA, I
Freescale Semiconductor
V
15
DD
= 20 V
DQ2
I
I
f = 1840 MHz
DQ1
DQ2
RF Device Data
25
= 170 mA
Actual
= 100 mA
= 170 mA
20
24 V
30 V
26 V
28 V
30
25