SMA661ASTR STMicroelectronics, SMA661ASTR Datasheet - Page 4

IC AMP GPS LOW NOISE SOT-666

SMA661ASTR

Manufacturer Part Number
SMA661ASTR
Description
IC AMP GPS LOW NOISE SOT-666
Manufacturer
STMicroelectronics
Datasheet

Specifications of SMA661ASTR

Current - Supply
8.5mA
Frequency
1575MHz
Gain
18dB
Noise Figure
1.15dB
Package / Case
SC-89-6, SOT-563F, SOT-666
Rf Type
GPS
Test Frequency
1.575GHz
Voltage - Supply
2.4V ~ 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P1db
-

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Electrical specifications
2
2.1
2.2
4/14
Electrical specifications
Absolute maximum ratings
Table 3.
Electrical characteristics
(T
according to
Table 4.
1. The device is switched to OFF state
2.
Symbol
Symbol
Stability
V
V
a
V
V
RLout
RLin
PDH
T
IIP2
IIP3
PDL
V
V
ISL
= +25 °C, V
I
NF
T
ESD
ESD
G
The device is switched to ON state
I
PD
stg
cc
cc
f
a
cc
p
(1)
(2)
Supply voltage
Storage temperature
Operating ambient temperature
Electrostatic discharge
Electrostatic discharge
Frequency
Supply voltage
Current consumption
Power down mode
current consumption
Power gain
Noise figure
Input IP2
Input IP3
Reverse Isolation
Input return loss
Output return loss
Power down low state
Power down high state
Absolute maximum ratings
Electrical characteristics
Figure 13
CC
Parameters
= 2.7 V, Z
Parameter
at pin level)
L
= Z
V
f1 = 849 MHz, f2 = 2424 MHz,
Pin = -30 dBm
f1 = 1574.5 MHz, f2 = 1575.5
MHz, Pin = -30 dBm
f = 1500-1650 MHz
f = 1500-1650 MHz
100 - 10000 MHz
S
PD
= 50 ohm, unless otherwise specified; measured
≤ V
PDL
Test conditions
HBM (ALL PINs)
MM (ALL PINs)
Conditions
Unconditionally stable
Min.
2.4
1.0
-60 to +150
-40 to +85
1575
±
Typ.
1.15
Value
±
2.7
8.5
0.5
-28
10
18
10
10
3
2000
3.3
200
Max.
SMA661AS
0.5
V
3
cc
Unit
o
o
MHz
dBm
dBm
Unit
V
V
V
mA
C
C
nA
dB
dB
dB
dB
dB
V
V
V

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