RF3866TR7 RFMD, RF3866TR7 Datasheet - Page 2

• Manufacturer Part Number: RF3866TR7
• Description: IC AMP LOW-NOISE 2-STAGE 20-QFN
• Manufacturer: RFMD

Specifications of RF3866TR7

• Current - Supply: 180mA ~ 220mA
• Frequency: 700MHz ~ 3.8GHz
• Gain: 20dB
• Noise Figure: 0.8dB
• P1db: 22dBm
• Package / Case: 20-QFN
• Rf Type: Cellular, CDMA, PCS, DCS, UMTS, WLAN, 802.16/WiMax
• Test Frequency: 3.3GHz ~ 3.8GHz
• Voltage - Supply: 2.5V ~ 6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF3866
2 of 12
Absolute Maximum Ratings
Supply Voltage
Input RF Level (See Note 1)
Current Drain, I
Operating Ambient Temperature
Storage Temperature
Note 1. Max continuous RF IN is +10dBm. The max transient RF IN is
High Band
Frequency
Current
Gain
Noise Figure
Output IP3
Output P1dB
S11
S22
S12
Mid Band
Frequency
Current
Gain
Noise Figure
Output IP3
Output P1dB
S11
S22
S12
Low Band
Frequency
Current
Gain
Noise Figure
OIP3
OP1dB
S11
S22
S12
Thermal
Theta
+20dBm.
JC
Parameter
Parameter
DD
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support, contact RFMD at ([phone] or [e-mail].
Min.
3300
1800
21.0
700
28
34
150 per stage
-40 to +150
-40 to +85
Rating
Specification
+10
6
Typ.
22.5
22.5
180
180
180
0.9
-15
-33
0.8
-10
-16
-40
1.0
-10
-12
-48
-17
20
37
22
30
36
32
37
30
Max.
3800
Unit
2700
1100
25.0
dBm
220
220
220
mA
1.0
32
°C
°C
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
°C/W
Unit
dBm
dBm
dBm
dBm
dBm
dBm
MHz
MHz
MHz
mA
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Caution! ESD sensitive device.
V
+25°C, V
unless specified
f
V
+25°C, V
unless specified
f
V
+25°C, V
unless specified
f
Dissipated power=V
1
1
1
DD
DD
DD
=3500MHz, f
=2000MHz, f
=850MHz, f
=5V
=5V
=5V
DD
DD
DD
=5V, I
=5V, I
=5V, I
2
2
2
=851MHz
=3501MHz
=2001MHz
Condition
DD
DD
DD
DD
=180mA, 3500MHz
=180mA, 2000MHz
=180mA, 850MHz
*(I
DD1
+I
DD2
)
DS100121