MMG3014NT1 Freescale Semiconductor, MMG3014NT1 Datasheet - Page 5

• Manufacturer Part Number: MMG3014NT1
• Description: IC AMP RF GP 4000MHZ 5V SOT-89
• Manufacturer: Freescale Semiconductor
• Type: General Purpose Amplifierr

Specifications of MMG3014NT1

• Current - Supply: 135mA
• Frequency: 4GHz
• Gain: 19.5dB
• Noise Figure: 5.7dB
• P1db: 25dBm
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Test Frequency: 900MHz
• Voltage - Supply: 5V
• Number Of Channels: 1
• Operating Frequency: 4000 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 160 mA @ 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Manufacturer's Type: Broadband Amplifier
• Frequency (max): 4GHz
• Operating Supply Voltage (typ): 5V
• Package Type: SOT-89
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Noise Figure (typ): 5.7@900MHzdB
• Rf Transistor Case: SOT-89
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Leaded Process Compatible: Yes
• Output Third Order Intercept Point, Ip3: 40.5dB
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMG3014NT1TR

RF Device Data
Freescale Semiconductor
10
8
6
4
2
0
42
40
38
0
4.5
−30
−40
−50
−60
−70
−80
Figure 8. Third Order Output Intercept Point
Figure 12. Noise Figure versus Frequency
10
Figure 10. Third Order Intermodulation versus
4.7
1
versus Collector Voltage
V
13
CC
, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
P
out
4.9
, OUTPUT POWER (dBm)
Output Power
16
2
5.1
19
f = 900 MHz
1 MHz Tone Spacing
50 OHM TYPICAL CHARACTERISTICS
3
V
I
f = 900 MHz
1 MHz Tone Spacing
V
I
CC
CC
CC
CC
5.3
= 135 mA
= 135 mA
= 5 Vdc
= 5 Vdc
22
4
5.5
25
10
10
10
−20
−30
−40
−50
−60
−70
42
40
38
5
4
3
−40
10
120
Figure 11. MTTF versus Junction Temperature
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
Figure 13. Single - Carrier W - CDMA Adjacent
Figure 9. Third Order Output Intercept Point
NOTE: The MTTF is calculated with V
CC
Channel Power Ratio versus Output Power
= 5 Vdc, I
−20
125
13
versus Case Temperature
CC
T
J
, JUNCTION TEMPERATURE (°C)
0
= 135 mA, f = 2140 MHz
P
out
T, TEMPERATURE (_C)
130
, OUTPUT POWER (dBm)
16
20
135
40
19
CC
V
f = 900 MHz
1 MHz Tone Spacing
= 5 Vdc, I
140
CC
60
= 5 Vdc
MMG3014NT1
CC
22
145
= 135 mA
80
150
100
25
5