MMG3014NT1 Freescale Semiconductor, MMG3014NT1 Datasheet

IC AMP RF GP 4000MHZ 5V SOT-89

MMG3014NT1

Manufacturer Part Number
MMG3014NT1
Description
IC AMP RF GP 4000MHZ 5V SOT-89
Manufacturer
Freescale Semiconductor
Type
General Purpose Amplifierr
Datasheet

Specifications of MMG3014NT1

Current - Supply
135mA
Frequency
4GHz
Gain
19.5dB
Noise Figure
5.7dB
P1db
25dBm
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Test Frequency
900MHz
Voltage - Supply
5V
Number Of Channels
1
Operating Frequency
4000 MHz
Operating Supply Voltage
5 V
Supply Current
160 mA @ 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Manufacturer's Type
Broadband Amplifier
Frequency (max)
4GHz
Operating Supply Voltage (typ)
5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
5.7@900MHzdB
Rf Transistor Case
SOT-89
Filter Terminals
SMD
Peak Reflow Compatible (260 C)
Yes
Leaded Process Compatible
Yes
Output Third Order Intercept Point, Ip3
40.5dB
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rf Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMG3014NT1TR

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Manufacturer
Quantity
Price
Part Number:
MMG3014NT1
Manufacturer:
AMTEK
Quantity:
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Part Number:
MMG3014NT1
Manufacturer:
FREESCALE
Quantity:
20 000
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Part Number:
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Quantity:
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Quantity:
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Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
input matched and internally output prematched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 4000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
• Frequency: 40 - 4000 MHz
• P1dB: 25 dBm @ 900 MHz
• Small - Signal Gain: 19.5 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
1. V
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
The MMG3014NT1 is a General Purpose Amplifier that is internally
Small- Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
(S21)
(S11)
(S22)
Compression
Intercept Point
Characteristic
Application Circuits.
Select Documentation/Application Notes - AN1955.
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system, in Freescale
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
MHz
19.5
40.5
900
- 25
Characteristic
- 11
25
(V
CC
2140
MHz
25.8
40.5
- 12
−13
15
= 5 Vdc, I
3500
MHz
- 19
10
25
40
- 8
CC
= 135 mA, T
dBm
dBm
Unit
dB
dB
dB
C
= 25°C)
Table 2. Maximum Ratings
2. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
R
θJC
Document Number: MMG3014NT1
(2)
MMG3014NT1
40 - 4000 MHz, 19.5 dB
CASE 1514 - 02, STYLE 1
Symbol
Value
V
T
InGaP HBT
I
P
T
CC
CC
stg
27.4
in
J
25 dBm
PLASTIC
SOT - 89
1 2
(3)
3
- 65 to +150
Value
Rev. 1, 9/2008
300
150
15
6
MMG3014NT1
°C/W
Unit
Unit
dBm
mA
°C
°C
V
1

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MMG3014NT1 Summary of contents

Page 1

... Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched designed for a broad range of Class A, small - signal, high linearity, general purpose applica- tions suitable for applications with frequencies from 40 to 4000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3014NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1C (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3014NT1 3 ...

Page 4

... OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 200 180 160 140 120 100 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3014NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −5 25°C − Figure 3. Input/Output Return Loss versus Vdc 135 0.5 42 ...

Page 5

... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power Vdc 900 MHz 1 MHz Tone Spacing − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc 135 Vdc 135 mA 2140 MHz OUTPUT POWER (dBm) out MMG3014NT1 80 100 150 25 5 ...

Page 6

... C1, C2 220 pF Chip Capacitors C3 0.1 μF Chip Capacitor C4 2.2 μF Chip Capacitor C5 0.2 pF Chip Capacitor C6 4.7 pF Chip Capacitor C7 1.8 pF Chip Capacitor Chip Inductor R1 0 Ω Chip Resistor MMG3014NT1 6 V SUPPLY R1 L1 DUT 0.172″ x 0.058″ Microstrip Z6 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...

Page 7

... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic C1 S11 S22 2200 2400 Figure 19. 50 Ohm Test Circuit Component Layout Description OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer C0805C220J5GAC Kemet C0603C104J5RAC Kemet C0805C225J4RAC Kemet C0603C159J5RAC Kemet C0603C119J5GAC Kemet HK160815NJ- T Taiyo Yuden ERJ3GEY0R00V Panasonic MMG3014NT1 7 ...

Page 8

... Table 10. 50 Ohm Test Circuit Component Designations and Values Part C1 Chip Capacitors C3 0.1 μF Chip Capacitor C4 2.2 μF Chip Capacitor C5, C6 1.1 pF Chip Capacitors Chip Inductor R1 0 Ω Chip Resistor MMG3014NT1 8 DUT 0.036″ x 0.058″ Microstrip Z6 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...

Page 9

... Figure 23. 50 Ohm Test Circuit Schematic C1 3550 3600 Figure 25. 50 Ohm Test Circuit Component Layout Description V SUPPLY OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer C0805C339J5GAC Kemet C0805C209J5GAC Kemet C0603C104J5RAC Kemet C0805C225J4RAC Kemet 06035J0R6BS AVX 06035J0R9BS AVX 06035J0R8BS AVX HK160856NJ- T Taiyo Yuden ERJ3GEY0R00V Panasonic MMG3014NT1 9 ...

Page 10

... MMG3014NT1 10 50 OHM TYPICAL CHARACTERISTICS ( Vdc 135 mA 25°C, 50 Ohm System ∠ φ 10.280 153.8 0.0336 10.107 148.3 ...

Page 11

... MMG3014NT1 11 ...

Page 12

... Recommended Solder Stencil Figure 26. Recommended Mounting Configuration MMG3014NT1 12 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3014NT1 13 ...

Page 14

... MMG3014NT1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MMG3014NT1 15 ...

Page 16

... Sept. 2008 • Updated Fig. 15, “S21, S11 and S22 versus Frequency”, to correct S11 and S22 curve label transposition error • Updated data in Table 12, “Common Emitter S-Parameters”, for better simulation response and 11 MMG3014NT1 16 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data ...

Page 17

... Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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