SGA-9189Z Sirenza Microdevices Inc, SGA-9189Z Datasheet

SGA-9189Z

Manufacturer Part Number

SGA-9189Z

Description

IC AMP HBT SIGE 3GHZ SOT-89

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SGA-9189Z.pdf (6 pages)

Specifications of SGA-9189Z

Current - Supply

180mA

Frequency

0Hz ~ 3GHz

Gain

13.2dB

Noise Figure

2.6dB

P1db

23.5 ~ 25.5dBm

Package / Case

SOT-89

Rf Type

WLL, WLAN

Test Frequency

1.95GHz

Voltage - Supply

5.5V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

599-1056-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-9189Z

Manufacturer:

Skyworks

Quantity:

558

Current page: 1 of 6
Download datasheet (191Kb)

Product Description

RFMD’s SGA-9189 is a high performance transistor designed for operation to

3GHz. With optimal matching at 2GHz, OIP

device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe

HBT) process. The SGA-9189 is cost-effective for applications requiring high linear-

ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.

The matte tin finish on the lead-free package utilizes a post annealing process to

mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.

This package is also manufactured with green molding compounds that contain no

EDS-101497 Rev I

Maximum Available Gain

Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

DC Current Gain

Breakdown Voltage

Thermal Resistance

Device Operating Voltage

Operating Current

Test Conditions: V

[1] 100% Tested

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Parameter

[2] Sample Tested

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

=5V, I

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

antimony trioxide nor halogenated fire retardants.

=180mA (unless otherwise noted), T

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA-9189(Z)

Medium Power

Discrete SiGe

Transistor

0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5

Min.

11.2

23.5

36.5

17.5

Typical Gmax, OIP3, P1dB @ 5V,180mA

100

155

7.5

Gmax

=39dBm, and P

Specification

Frequency (GHz)

Typ.

20.5

13.2

19.0

12.2

25.5

40.0

39.0

180

2.1

2.6

8.5

5.5

=25°C.

OIP3

MEDIUM POWER DISCRETE SiGe TRANSISTOR

1dB

P1dB

Max.

RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)

20.5

13.2

300

195

=25.5dBm. This RF

°C/W

Unit

dBm

900MHz, Z

1960MHz

900MHz [1], Z

1960MHz [2]

900MHz, Z

1960MHz [2]

900MHz, Z

1960MHz [2]

900MHz, Z

1960MHz

collector - emitter

junction - lead

collector - emitter

Features

Applications

tone

Available in RoHS Compliant and

Green Packaging

50MHz to 3000MHz Operation

39dBm Output IP

1.96GHz

12.2dB Gain Typ. at 1.96GHz

25.5dBm P

2.1dB NF Typ. at 0.9GHz

Cost-Effective

3V to 5V Operation

Wireless Infrastructure Driver

Amplifiers

CATV Amplifiers

Wireless Data, WLL Amplifiers

AN-021 Contains Detailed Appli-

cation Circuits

SGA-9189(Z)

SOPT

*, Z

SOPT

Condition

, Z

1dB

, Z

LOPT

LOPT,

LOPT

Package: SOT-89

Typ. at 1.96GHz

LOPT

OUT

Typ. at

=+10dBm per

1 of 6

Related parts for SGA-9189Z

SGA-9189Z Summary of contents

Page 1

... With optimal matching at 2GHz, OIP device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linear- ity even at moderate biasing levels well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95 ...

Page 2

... SGA-9189(Z) Absolute Maximum Ratings Parameter Max Base Current (IB) Max Device Current (ICE) Max Collector-Emitter Voltage (VCEO) Max Collector-Base Voltage (VCBO) Max Emitter-Base Voltage (VEBO) Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp *Note: Load condition1, Z =50Ω. L Operation of this device beyond any one of these limits may cause permanent dam- age ...

Page 3

... The data represents typical performace of the device DC-IV Curves (V) CE SGA-9189(Z) Insertion Gain vs Temperature T = -40, 25, 85° Frequency (GHz) S22 vs Frequency 1.0 0.5 2.0 5 GHz 4 GHz 3 GHz 5.0 2 GHz 8 GHz 1 GHz ...

Page 4

... SGA-9189(Z) Pin Function Description 1 Base RF input. 2 Emitter Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. 3 Collector RF output. 4 Emitter Same as pin 2. Recommended Mounting Configuration for Optimum RF and Thermal Plated Thru Holes (0.020" DIA) Machine Screws Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature ...

Page 5

... The part will be symbolized with the “P1” (“P1Z” for RoHS version) designator and a dot signifying pin 1 on the top surface of the package. Alternate marking “SGA9189Z” or “SGA9189” on line one with Trace Code on line two. Part Number SGA-9189 SGA-9189Z 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101497 Rev I ...

Page 6

... SGA-9189(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101497 Rev I ...

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