MGA-633P8-BLKG Avago Technologies US Inc., MGA-633P8-BLKG Datasheet - Page 2

• Manufacturer Part Number: MGA-633P8-BLKG
• Description: IC LNA ULTRA LN ACT BIAS 8DFN
• Manufacturer: Avago Technologies US Inc.
• Type: Low Noise Amplifierr

Specifications of MGA-633P8-BLKG

• P1db: 22dBm
• Noise Figure: 0.37dB
• Package / Case: 8-WFDFN Exposed Pad
• Current - Supply: 54mA
• Frequency: 450MHz ~ 2GHz
• Gain: 18dB
• Rf Type: CDMA, GSM
• Test Frequency: 900MHz
• Voltage - Supply: 5V
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 900 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 54 mA
• Maximum Power Dissipation: 495 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-2280; MGA-633P8-BLKG

Absolute Maximum Rating
Electrical Specifications
RF performance at T
list in Table1 for 900 MHz matching.
Notes:
1. Measurements at 900 MHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application
2
Symbol
V
I
P
P
T
T
T
MSL
Symbol
I
Gain
OIP3
NF
OP1dB
IRL
ORL
REV ISOL
dd
dd
amb
diss
j
STG
dd
max
note for more details.
[3]
[2]
Parameter
Device Voltage, RF output to ground
Drain Current
CW RF Input Power
(V
Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
dd
= 5.0 V, I
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Noise Figure
Output Power at 1dB Gain Compression
Input Return Loss, 50: source
Output Return Loss, 50: load
Reverse Isolation
A
RF1
[1], [4]
= 25°C, V
= 900 MHz, F
dd
[1]
= 54 mA)
T
A
=25°C
dd
RF2
=5V, R
[3]
= 901 MHz with input power of -15dBm per tone.
bias
=6.8kOhm, 900MHz, measured on demo board in Figure 5 with component
Units
V
mA
dBm
W
°C
°C
°C
Absolute Max.
5.5
90
+20
0.495
150
-65 to 150
-40 to 85
1
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Min.
39
16.5
34
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-
3. Power dissipation with unit turned on.
Thermal Resistance
I
dd
these limits may cause permanent damage.
Red Measurement Technique.
Board temperature T
13.89mW/°C for T
= 54 mA), T
Typ.
54
18
37
0.37
22
15
21
21
jc
= 72°C/W
B
[2]
>114°C.
(V
B
dd
is 25°C. Derate at
= 5.0 V,
Max.
67
19.5
0.6