SBF-4089Z Sirenza Microdevices Inc, SBF-4089Z Datasheet - Page 2

• Manufacturer Part Number: SBF-4089Z
• Description: IC AMP HBT 500MHZ SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SBF-4089Z

• Current - Supply: 82mA ~ 98mA
• Frequency: 0Hz ~ 500MHz
• Gain: 13.2dB ~ 16.2dB
• Noise Figure: 3.3dB ~ 4.3dB @ 500MHz
• P1db: 18.4dBm ~ 19.9dBm
• Package / Case: SOT-89
• Rf Type: Cellular, GSM, PCS, UMTS
• Test Frequency: 400MHz
• Voltage - Supply: 4.5V ~ 5.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 599-1008-2

SBF-4089(Z)
Typical RF Performance at Key Operating Frequencies
2 of 8
Absolute Maximum Ratings
Device Current (I
Device Voltage (V
Max Operating Dissipated Power
Junction Temp (T
Operating Temp Range (T
Storage Temp
ESD Rating - Human Body Model
Moisture Sensitivity Level
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Output Power at 1dB Compression
Output Third Order Intercept Point
(HBM)
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
Output Return Loss
20.5
19.5
18.5
17.5
<(T
Input Return Loss
Small Signal Gain
Reverse Isolation
20
19
18
17
Parameter
Noise Figure
J
Parameter
50
-T
L
)/R
D
J
D
)
S
)
)
TH
=8V, I
, j-l and T
+25c
-40c
+85c
250
D
L
)
=90mA Typ., OIP
P1dB vs Temp
Frequency(MHz)
L
=T
LEAD
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support, contact RFMD at ([phone] or [e-mail].
450
Unit
dBm
dBm
dB
dB
dB
dB
dB
3
Tone Spacing=1MHz, P
650
-40 to +85
Class 1C
Rating
4.5
3.5
2.5
1.5
0.5
MSL 2
+150
+150
5
4
3
2
1
0
70MHz
150
0.8
50
6
14.9
40.0
20.1
3.2
18
15
18
850
+25c
-40c
+85c
Noise Figure vs Temp
250
OUT
100MHz
Frequency(MHz)
per tone=0dBm. T
14.9
40.5
20.1
3.3
22
18
16
Unit
mA
°C
°C
°C
W
V
450
240MHz
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
14.9
42.5
20.1
650
3.3
22
17
18
L
=25°C, R
45
43
41
39
37
35
33
31
29
27
25
Caution! ESD sensitive device.
50
BIAS
850
400MHz
+25c
-40c
+85c
=33Ω, Z
14.8
19.9
41.0
3.3
21
19
18
250
TOIP vs Temp
Frequency(MHz)
S
=Z
L
=50Ω, App circuit.
450
500MHz
14.7
40.0
20.1
3.3
21
21
18
650
EDS-103412 Rev E
850MHz
14.3
35.1
18.1
3.3
19
18
18
850