SGL-0622Z Sirenza Microdevices Inc, SGL-0622Z Datasheet

IC AMP HBT SIGE 4000MHZ 8-QFN

SGL-0622Z

Manufacturer Part Number
SGL-0622Z
Description
IC AMP HBT SIGE 4000MHZ 8-QFN
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGL-0622Z

Current - Supply
7.5mA ~ 12.5mA
Frequency
5MHz ~ 4GHz
Gain
14.5dB ~ 18.5dB
Noise Figure
2.8dB
P1db
-1.4dBm
Package / Case
8-QFN
Rf Type
ISM, GPS, 802.16/WiMax
Test Frequency
3.5GHz
Voltage - Supply
2.7V ~ 3.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
599-1078-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGL-0622Z
Manufacturer:
NPC
Quantity:
340
Part Number:
SGL-0622Z
Manufacturer:
RFMD
Quantity:
20 000
Part Number:
SGL-0622ZPCK1
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
SGL-0622ZSB
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
SGL-0622ZSQ
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
SGL-0622ZSR
Manufacturer:
TST
Quantity:
5 000
Product Description
The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power
single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection
and high input overdrive capability ensures rugged performance, while its
integrated active bias circuit maintains robust stable bias over tempera-
ture and process beta variation. The SGL-0622Z is internally matched
from 5MHz to 4000 MHz and requires only 4 to 5 external biasing compo-
nents (DC blocks, bypass caps, inductive choke). The SGL-0622Z is fabri-
cated using highly repeatable Silicon Germanium technology and is
EDS-104519 Rev F
Small Signal Gain
Output Power at 1dB Compression
Input Third Order Intercept Point
Input Return Loss
Output Return Loss
Noise Figure
Reverse Isolation
Thermal Resistance
Device Operating Current
Test Conditions: V
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Parameter
CC
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
=3.3V, I
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
housed in a cost-effective RoHS/WEEE compliant QFN
2x2 miniature package.
D
=10.5mA Typ., IIP
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGL-0622Z
5MHz to
4000MHz Low
Noise MMIC
Amplifier Sili-
con Germa-
nium
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
100.0
Min.
-16.0
25.0
14.5
12.0
3.3
6.0
7.5
3
600.0
Tone Spacing=1MHz, P
Specification
Typical Performance
1100.0
Frequency (MHz)
Gain
-12.0
-13.0
-28.0
Typ.
28.0
23.0
16.5
14.0
12.0
10.0
14.0
22.0
10.5
-1.4
-8.5
150
5.3
1.5
9.5
1.5
2.0
2.8
1600.0
NF
2100.0
OUT
2600.0
Max.
31.0
18.5
12.5
1.9
per tone=-15dBm, T
3100.0
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
5MHz to 4000MHz LOW NOISE MMIC
°C/W
Unit
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
AMPLIFIER SILICON GERMANIUM
L
=25°C, Z
RFMD Green, RoHS Compliant, Pb-Free
1.575GHz
2.44GHz
3.50GHz
1.575GHz
2.44GHz
3.50GHz
1.575GHz
2.44GHz
3.50GHz
1.575GHz
2.44GHz
3.50GHz
1.575GHz
2.44GHz
3.50GHz
1.575GHz
2.44GHz
3.50GHz
0.05GHz to 4.0GHz
junction - lead
Features
Applications
S
High Gain=28dB at 1575MHz
Low Noise Figure=1.5dB at
1575MHz
Low Power Consumption,
10.5mA @ 3.3V
Battery Operation:2.7V to 3.6V
(Active Biased)
Fully Integrated Matching
Class-1C ESD Protection
(>1000V HBM)
High input overdrive capability,
+18dBm
High Gain GPS Receivers
ISM and WiMAX LNAs
=Z
L
=50Ω
SGL-0622Z
Condition
Package: QFN, 2x2
1 of 6

Related parts for SGL-0622Z

SGL-0622Z Summary of contents

Page 1

... Germa- nium Product Description The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection and high input overdrive capability ensures rugged performance, while its integrated active bias circuit maintains robust stable bias over tempera- ture and process beta variation ...

Page 2

... SGL-0622Z Absolute Maximum Ratings Parameter Device Current ( Device Voltage ( Input Power* (See Note) Junction Temp ( Operating Temp Range ( Storage Temp ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level *Note: Load condition1, ZL=50Ω. Load condition2, Z Operation of this device beyond any one of these limits may cause permanent damage ...

Page 3

... P versus Frequency 1dB 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 1.5 2.0 2.5 3.0 Frequency (GHz) SGL-0622Z IIP versus Frequency 3 25°C -40°C 85°C 2.0 2.5 3.0 3.5 Frequency (GHz) 25°C -40°C 85°C 3 ...

Page 4

... SGL-0622Z Application Circuit Data, V IM3 versus Frequency -35.0 -40.0 -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 1.5 2.0 2.5 Frequency (GHz) S22 versus Frequency 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) S12 versus Frequency ...

Page 5

... RF performance. Vias should be located under the EPAD as shown in the recommended land pattern. Refer to drawing posted at www.rfmd.com for tolerances. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-104519 Rev F Suggested Pad Layout Nominal Package Dimensions Dimensions in inches (millimeters) Part Identification SGL-0622Z Package Type QFN ...

Page 6

... Part Number SGL-0622Z Lead Free, RoHS Compliant SGL-0622Z-EVB1 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Application Schematic 1200 100pF SGL-0622Z 100pF Epad Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink PCB Ordering Information Description Reel Size 7” ...

Related keywords