BGU7005,115 NXP Semiconductors, BGU7005,115 Datasheet

IC AMP MMIC GPS LNA 6-XSON

BGU7005,115

Manufacturer Part Number
BGU7005,115
Description
IC AMP MMIC GPS LNA 6-XSON
Manufacturer
NXP Semiconductors
Type
Low Noise Amplifierr
Datasheet

Specifications of BGU7005,115

P1db
-11dBm
Noise Figure
0.9dB
Package / Case
6-XSON (Micropak™), SOT-886
Current - Supply
4.5mA
Frequency
850MHz, 1.9GHz
Gain
16.5dB
Rf Type
GPS
Test Frequency
1.575GHz
Voltage - Supply
1.5 V ~ 2.85 V
Mounting Style
SMD/SMT
Number Of Channels
1 Channel
Operating Frequency
1575 MHz
Operating Supply Voltage
1.5 V to 2.85 V
Supply Current
4.5 mA
Maximum Power Dissipation
55 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4983-2
934063838115

Available stocks

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Price
Part Number:
BGU7005,115
Manufacturer:
RENESAS
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Part Number:
BGU7005,115
Manufacturer:
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Quantity:
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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
The BGU7005 is a Low Noise Amplifier (LNA) for GPS receiver applications in a plastic
leadless 6-pin, extremely small SOT886 package. The BGU7005 requires only one
external matching inductor and one external decoupling capacitor.
The BGU7005 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels it delivers 16.5 dB gain at a noise
figure of 0.9 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
BGU7005
SiGe:C Low Noise Amplifier MMIC for GPS
Rev. 03 — 23 June 2010
Small 6-pin leadless package 1 mm × 1.45 mm × 0.5 mm
Low noise high gain MMIC
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply decoupling capacitor
Input and output DC decoupled
Noise figure (NF) = 0.9 dB at 1.575 GHz
Integrated matching for the output
Gain 16.5 dB at 1.575 GHz
High 1 dB compression point of −11 dBm
High out of band IP3
110 GHz transit frequency - SiGe:C technology
Supply voltage 1.5 V to 2.85 V, optimized for 1.8 V
Power-down mode current consumption < 1 μA
Optimized performance at low 4.5 mA supply current
ESD protection on all pins (HBM > 2 kV)
LNA for GPS in handsets, PDA’s and Portable Navigation Devices
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
i
of 9 dBm
Product data sheet

Related parts for BGU7005,115

BGU7005,115 Summary of contents

Page 1

BGU7005 SiGe:C Low Noise Amplifier MMIC for GPS Rev. 03 — 23 June 2010 1. Product profile 1.1 General description The BGU7005 is a Low Noise Amplifier (LNA) for GPS receiver applications in a plastic leadless 6-pin, extremely small SOT886 ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1575 MHz; V inductor; unless otherwise specified. Symbol Parameter V supply voltage CC I supply current CC G power gain p NF noise figure P input power i(1dB) gain compression IP3 input third-order intercept point i [ 1713 MHz Pinning information Table 2. ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BGU7005 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg the temperature at the soldering point of the emitter lead Thermal characteristics Table 6. Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7 ...

Page 4

... NXP Semiconductors Table 7. Characteristics …continued f = 1575 MHz 1 >= 0 ENABLE unless otherwise specified. Symbol Parameter G power gain p RL input return loss in RL output return loss out ISL isolation NF noise figure P input power gain compression i(1dB) BGU7005 Product data sheet SiGe:C Low Noise Amplifier MMIC for GPS − ...

Page 5

... NXP Semiconductors Table 7. Characteristics …continued f = 1575 MHz 1 >= 0 ENABLE unless otherwise specified. Symbol Parameter IP3 input third-order intercept point i t turn-on time on t turn-off time off K Rollett stability factor [1] Out of band. [ 1713 MHz 1851 MHz [3] Within the final gain. Table 8. − ...

Page 6

... NXP Semiconductors (mA 1.0 1.5 2.0 2.5 = −45 dBm −40 °C (1) T amb = +25 °C (2) T amb = +85 °C (3) T amb Fig 2. Supply current as a function of supply voltage; typical values (dB (1) ( 500 1000 1500 2000 = −45 dBm 1 −40 °C (1) T amb = +25 °C (2) T amb = +85 ° ...

Page 7

... NXP Semiconductors (dB) (3) 12 (2) ( 500 1000 1500 2000 = −45 dBm ° amb ( Fig 6. Power gain as a function of frequency; typical values 1.6 NF (dB) 1.2 0.8 0.4 0 1.2 1.6 2.0 2 °C; no jammer 1575 MHz; T amb Fig 8. Noise figure as a function of supply current; ...

Page 8

... NXP Semiconductors 4 NF (dB −50 −40 −30 − ° 1575 MHz 850 MHz; T jam amb ( Fig 10. Noise figure as a function of jamming power; typical values (dB) −3 −6 −9 (1) −12 (2) (3) −15 500 1000 1500 2000 = −45 dBm 1 −40 °C (1) T amb = +25 °C ...

Page 9

... NXP Semiconductors (dB) −3 −6 −9 −12 −15 500 1000 1500 2000 = −45 dBm ° amb ( Fig 14. Input return loss as a function of frequency; typical values 0 (1) RL out (2) (dB) (3) −4 −8 −12 −16 −20 500 1000 1500 2000 = −45 dBm 1 −40 °C ...

Page 10

... NXP Semiconductors 0 RL out (dB) −4 −8 −12 −16 (1) (2) (3) −20 500 1000 1500 2000 = −45 dBm ° amb ( Fig 18. Output return loss as a function of frequency; typical values 0 ISL (dB) −10 (1) (2) (3) −20 −30 −40 500 1000 1500 2000 = −45 dBm 1 −40 °C ...

Page 11

... NXP Semiconductors 0 ISL (dB) −10 (1) (2) (3) −20 −30 −40 500 1000 1500 2000 = −45 dBm ° amb ( Fig 22. Isolation as a function of frequency; typical values 0 P i(1dB) (dBm) −4 −8 −12 −16 −20 1.2 1.6 2.0 2 850 MHz. = −40 °C (1) T amb = +25 ° ...

Page 12

... NXP Semiconductors f = 1575 MHz. (1) T amb (2) T amb (3) T amb Fig 26. Input power gain compression as a function of supply voltage; typical values 20 IMD3 (dBm 1713 MHz signal 0 L −20 (1) (2) −40 (3) −60 IMD3 of 1575 MHz signal −80 (1) −100 (2) (3) −120 −40 −35 − ...

Page 13

... NXP Semiconductors 2 10 (3) ( − 2000 4000 6000 = 25 ° −45 dBm. T amb Fig 29. Rollett stability factor as a function of frequency; typical values 8.2 GPS front-end The GPS LNA is typically used in a GPS front-end. A GPS front-end application circuit and its characteristics is provided here. ...

Page 14

... NXP Semiconductors Table 10. List of components For schematics see Figure 31. Component Description BPF1, BPF2 GPS SAW filter C1 decoupling capacitor IC1 BGU7005 L1 high quality matching inductor 8.3 Characteristics GPS front-end Table 11. Characteristics GPS front-end f = 1575 MHz 1 >= 0.8 V; power at LNA input P CC ENABLE Ω ...

Page 15

... NXP Semiconductors 9. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) ( UNIT max max 0.25 1.5 1.05 mm 0.5 0.04 0.17 1.4 0.95 Notes 1. Including plating thickness. ...

Page 16

... NXP Semiconductors 10. Abbreviations Table 12. Acronym AC FM GPS HBM LNA MMIC PDA RF SAW SiGe:C 11. Revision history Table 13. Revision history Document ID Release date BGU7005 v.3 20100623 • Modifications: Section 1.2 on page HBM > 2 kV. BGU7005_2 20100304 BGU7005_1 20091028 BGU7005 Product data sheet SiGe:C Low Noise Amplifier MMIC for GPS ...

Page 17

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 18

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 19

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Application information 8.1 GPS LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 GPS front-end ...

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