BGA2012,115 NXP Semiconductors, BGA2012,115 Datasheet - Page 4
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BGA2012,115
Manufacturer Part Number
BGA2012,115
Description
MMIC AMPLIFIER 1.9GHZ SOT363
Manufacturer
NXP Semiconductors
Type
Silicon MMIC Amplifierr
Datasheet
1.BGA2012115.pdf
(12 pages)
Specifications of BGA2012,115
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
7.5mA
Frequency
1.9GHz
Gain
16dB
Noise Figure
1.7dB
Rf Type
CDMA, DECT, PHS
Test Frequency
1.9GHz
Voltage - Supply
3V ~ 4.5V
Operating Supply Voltage
4.5 V
Supply Current
15 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P1db
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2065-2
934056366115
BGA2012 T/R
934056366115
BGA2012 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BGA2012,115
Manufacturer:
NXP
Quantity:
30 000
NXP Semiconductors
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
2000 Dec 04
handbook, full pagewidth
C1, C2
C3, C5
C4
C6
L1
L2
COMPONENT
1900 MHz high linear low noise amplifier
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
RF in
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
SMD inductor
V C
C1
DESCRIPTION
L1
C6
V C
C5
IN
SOT363
CIRCUIT
BIAS
Fig.2 Application circuit.
stripline
V S
APPLICATION
4
GND
TYPICAL
OUT
100 pF
22 nF
C4
L2
C2
C3
APPLICATION
HIGH IP3
V S
MLD470
RF out
100 pF
100 nF
3.9 nH
3.9 nH
22 nF
r
= 6.15),
Product specification
DIMENSIONS
BGA2012
0603
0603
0805
0603
0603